Optimizing the trade-off between the RDS(on) of power MOSFETs and linear mode perfomance by local modification of MOSFET gain

Modern generations of power MOSFETs are more vulnerable to thermal runaway when operating in linear mode due to the very high MOSFET gain required for ultra-low RDS(on) With the aid of electrothermal simulation, the MOSFET gain was locally modified to improve the electrothermal behavior under linear...

Full description

Saved in:
Bibliographic Details
Main Authors: Mo-Huai Chang, Rutter, Phil
Format: Conference Proceeding
Language:English
Subjects:
Design optimization
Gain
Impedance
Integrated circuits
linear mode
MOSFET
MOSFETs
Optimization
Power semiconductor devices
safe operating area (SOA)
Semiconductor optical amplifiers
Simulation
Stability analysis
Temperature distribution
Temperature measurement
thermal runaway
Thermal stability
Tradeoffs
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Modern generations of power MOSFETs are more vulnerable to thermal runaway when operating in linear mode due to the very high MOSFET gain required for ultra-low RDS(on) With the aid of electrothermal simulation, the MOSFET gain was locally modified to improve the electrothermal behavior under linear mode operation. Based on the target application requirement, one can optimize the die design to achieve the desired trade-off between RDS(on) and linear mode performance.
ISSN:1946-0201
DOI:10.1109/ISPSD.2016.7520857