Fast Active-Quenching Circuit for Free-Running InGaAs(P)/InP Single-Photon Avalanche Diodes

A fast active-quenching circuit (FAQC) based on SiGe Hetero-junction Bipolar Transistor (HBT) and InGaP/GaAs HBT integrated circuits is designed for use with free-running single-photon avalanche diodes (SPADs). The performances of both InGaAsP/InP SPAD and InGaAs/InP SPAD are tested. Results show th...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2016-10, Vol.52 (10), p.1-6
Main Authors: Liu, Junliang, Li, Yongfu, Ding, Lei, Wang, Ying, Zhang, Tingfa, Wang, Qingpu, Fang, Jiaxiong
Format: Article
Language:English
Subjects:
activequenching circuit
Avalanche diodes
Bias
Cathodes
Circuits
Construction
free-running single-photon detector
Heterojunction bipolar transistors
Indium phosphides
Integrated circuits
Logic gates
Photonics
Quantum electronics
Radio frequency
Resistors
Silicon germanides
Single-photon avalanche diode
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Description
Summary:A fast active-quenching circuit (FAQC) based on SiGe Hetero-junction Bipolar Transistor (HBT) and InGaP/GaAs HBT integrated circuits is designed for use with free-running single-photon avalanche diodes (SPADs). The performances of both InGaAsP/InP SPAD and InGaAs/InP SPAD are tested. Results show that the typical avalanche duration using the FAQC is 1.6 ns, and the total afterpulse probability is lower than 10% when the hold-off time is above 1 μs at 1.5 V excess bias or 10 μs at 3.0 V excess bias. This result is comparable to recently developed negative-feedback avalanche diodes. The FAQC is based on commercially available integrated circuits and can be used with typical SPADs, providing a low-cost approach to build a free-running single-photon detector.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2016.2597798