Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing

Nonvolatile spintronic devices have potential advantages, such as fast read/write and high endurance together with back-end-of-the-line compatibility, which offers the possibility of constructing not only stand-alone RAMs and embedded RAMs that can be used in conventional VLSI circuits and systems b...

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Bibliographic Details
Published in:Proceedings of the IEEE 2016-10, Vol.104 (10), p.1844-1863
Main Authors: Hanyu, Takahiro, Endoh, Tetsuo, Suzuki, Daisuke, Koike, Hiroki, Ma, Yitao, Onizawa, Naoya, Natsui, Masanori, Ikeda, Shoji, Ohno, Hideo
Format: Article
Language:English
Subjects:
Computer architecture
Field-programmable gate array
image recognition
logic-in-memory architecture
Magnetic tunneling
magneto-resistive RAM
Magnetoelectronics
microcontroller unit (MCU)
MTJ device
MTJ/MOS-hybrid circuit
nonvolatile LSI
Nonvolatile memory
Performance evaluation
power gating
Random access memory
Spintronics
standby power
ternary content-addressable memory
Very large scale integration
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Summary:Nonvolatile spintronic devices have potential advantages, such as fast read/write and high endurance together with back-end-of-the-line compatibility, which offers the possibility of constructing not only stand-alone RAMs and embedded RAMs that can be used in conventional VLSI circuits and systems but also standby-power-free high-performance nonvolatile CMOS logic employing logic-in-memory architecture. The advantages of employing spintronic devices, especially magnetic tunnel junction (MTJ) devices with CMOS circuits, are discussed, and the current status of the MTJ-based VLSI computing paradigm is presented along with its prospects and remaining challenges.
ISSN:0018-9219
1558-2256
DOI:10.1109/JPROC.2016.2574939