Reliability-performance trade-off for work-function optimization in advanced node replacement metal gate technology

In this work, we explore the complex interaction of the gate stack process and time-dependent-dielectric breakdown (TDDB) in high-K (HK) replacement metal gate (RMG) n-metal-oxide-semiconductor field effect transistors (nMOSFETs). TDDB is a key reliability metric governing the product lifetimes unde...

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Bibliographic Details
Main Authors: Ranjan, R., Nigam, T., Parameshwaran, B., Liu, Y., Yap, S. F.
Format: Conference Proceeding
Language:English
Subjects:
Logic gates
MOSFET
Optimization
Performance evaluation
Reliability
Replacement metal gate (RMG)
threshold voltage (V t )
Time-dependent-dielectric breakdown (TDDB)
Tin
voltage acceleration exponent (VAE)
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Summary:In this work, we explore the complex interaction of the gate stack process and time-dependent-dielectric breakdown (TDDB) in high-K (HK) replacement metal gate (RMG) n-metal-oxide-semiconductor field effect transistors (nMOSFETs). TDDB is a key reliability metric governing the product lifetimes under long-term operation. Based on this study, it is observed that TDDB is greatly modulated by the proximity of Al to the MG/HK interface. The key parameter modulated by gate stack optimization is voltage acceleration exponent (VAE) for TDDB. All observations indicate higher VAEs can be achieved by keeping the Al away from the MG/HK interface.
ISSN:1938-1891
DOI:10.1109/IRPS.2016.7574601