Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at t...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 2017-01, Vol.64 (1), p.415-420
Main Authors: Javanainen, Arto, Galloway, Kenneth F., Nicklaw, Christopher, Bosser, Alexandre L., Ferlet-Cavrois, Veronique, Lauenstein, Jean-Marie, Pintacuda, Francesco, Reed, Robert A., Schrimpf, Ronald D., Weller, Robert A., Virtanen, Ari
Format: Article
Language:English
Subjects:
Current-voltage characteristics
Degradation
Deposition
Energy
ion radiation effects
Ions
Leakage
Leakage current
Leakage currents
modeling
power semiconductor devices
Radiation effects
Schottky diodes
Silicon carbide
Xenon
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2016.2616921