Modeling and simulation of short-channel MOSFETs operating in deep weak inversion

As circuit densities continue to increase and battery operated systems demand lower power operation, more designs will incorporate small geometry (short and narrow) MOSFETs operating in deep weak inversion. Our research into massively parallel electron emitter arrays for lithographic applications ha...

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Bibliographic Details
Main Authors: Vann, J.M., Smith, M.C., Simpson, M.L., Thomas, C.E., Paulus, M.J., Moore, J.A., Baylor, L.R., Rochelle, J.M., Lowndes, D.H., Geohegan, D.B., Jellison, G.E., Merkulov, V.I., Puretzky, A.A., Voelkl, E.
Format: Conference Proceeding
Language:English
Subjects:
Batteries
CMOS process
CMOS technology
Geometry
Laboratories
Lithography
MOSFETs
Semiconductor device modeling
Solid modeling
Threshold voltage
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Summary:As circuit densities continue to increase and battery operated systems demand lower power operation, more designs will incorporate small geometry (short and narrow) MOSFETs operating in deep weak inversion. Our research into massively parallel electron emitter arrays for lithographic applications has included the design of short-channel MOSFETs operating at currents as small as 100 pA. Simulation of these weakly inverted, small geometry devices required the development of appropriate model parameters. We report our method for determining BSIM model parameters for short channel devices operating in the deep subthreshold region. In addition we show our modeling results with a commercial 0.5 /spl mu/m CMOS process.
DOI:10.1109/MWSCAS.1998.759426