Small-signal IMPATT diode characterization for mm-wave power generation in monolithic scenarios

concretely aiming at the efficient millimeter-wave power generation for monolithically integrated design, the small-signal S-parameter characterization of the impact-ionization avalanche transit-time (IMPATT) diodes was presented in this work. By combining the measured S-parameter data both of the 4...

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Bibliographic Details
Main Authors: Wogong Zhang, Oehme, Michael, Matthies, Klaus, Stefani, Viktor, Raju, Ashraful I., Kasper, Erich, Schulze, Jorg
Format: Conference Proceeding
Language:English
Subjects:
Coplanar waveguides
CPW
Current measurement
E-band
Frequency measurement
IMPATT
Impedance
Kurokawa condition
millimeter-wave
monolithic
oscillator
Oscillators
power generation
Resonant frequency
S-parameter
Scattering parameters
small-signal
spectrum measurement
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Summary:concretely aiming at the efficient millimeter-wave power generation for monolithically integrated design, the small-signal S-parameter characterization of the impact-ionization avalanche transit-time (IMPATT) diodes was presented in this work. By combining the measured S-parameter data both of the 40 × 2 μm 2 IMPATT diode and different short ended coplanar waveguide (CPW) structures, a designing-by-characterizing procedure was demonstrated for a monolithic E-band IMPATT oscillator. In spite of much less tuning freedom compared with the conventional discrete design, the Kurokawa condition for steady oscillation using IMPATT diode as active device was still well caught and comprehensively demonstrated by all characterized data. According to measured amplification spectra, the oscillation condition was optimally met at 70.54 GHz under the biasing condition of 37.11 mA for the finalized oscillator, which agrees well with the design prediction. Without any extra cooling element, which is a must for conventional discrete design, the monolithic IMPATT oscillator (~ 0.2 mm 2 ) was functional free of damage over 20 minutes under continuous-wave (CW) biasing modus.
ISSN:2378-6558
DOI:10.1109/ESSDERC.2016.7599600