Transfer matrix based semiclassical model for field-induced and geometrical quantum confinement in tunnel FETs

The paper presents a semi-classical model to take into account the effect of field induced as well as geometric quantization. It uses the transfer matrix method to determine whether the energy of a given tunnel path lies above or below the first sub-band level. The validity of the model is verified...

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Bibliographic Details
Main Authors: Sant, Saurabh, Carrillo-Nunez, Hamilton, Luisier, Mathieu, Schenk, Andreas
Format: Conference Proceeding
Language:English
Subjects:
Computational modeling
field induced quatum confinement
Gemoetrical quantum confinement
Line Tunneling
Logic gates
Quantization (signal)
Semiconductor process modeling
TFETs
Tunnel FET
Tunneling
Two dimensional displays
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Summary:The paper presents a semi-classical model to take into account the effect of field induced as well as geometric quantization. It uses the transfer matrix method to determine whether the energy of a given tunnel path lies above or below the first sub-band level. The validity of the model is verified by simulating transfer characteristics of a one-dimensional InGaAs/GaAsSb n-channel TFET and comparing the result with those of quantum-mechanical calculations. Furthermore, the good agreement between transfer characteristics of InAs/Si bilayer TFETs obtained by 2D semi-classical simulations with those found by OMEN simulations suggests that the developed model is also useful for 2D devices. It also implies that, replacing a rigid 2D TFET simulation by semi-classical 1D simulations along straight tunnel paths is a viable TCAD approach.
ISSN:1946-1577
DOI:10.1109/SISPAD.2016.7605152