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Field dependent critical trap density for thin gate oxide breakdown
We have found that the total trapped negative charge in a thin gate-oxide at the point of breakdown is a strong function of the stress field. This observation is in direct contrast with previous reports in the literature. The field dependent behavior of total trapped charge leads to the conclusion t...
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| creator | Cheung, K.P. Liu, C.T. Chang, C.-P. Colonell, J.I. Lai, W.Y.-C. Liu, R. Miner, J.F. Pai, C.S. Vaidya, H. Clemens, J.T. Hasegawa, E. |
| description | We have found that the total trapped negative charge in a thin gate-oxide at the point of breakdown is a strong function of the stress field. This observation is in direct contrast with previous reports in the literature. The field dependent behavior of total trapped charge leads to the conclusion that the critical trap density for breakdown is also field dependent. We use field dependent hopping conduction to explain why the critical trap density for breakdown in the percolation model should be field dependent. |
| doi_str_mv | 10.1109/RELPHY.1999.761592 |
| format | conference_proceeding |
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This observation is in direct contrast with previous reports in the literature. The field dependent behavior of total trapped charge leads to the conclusion that the critical trap density for breakdown is also field dependent. We use field dependent hopping conduction to explain why the critical trap density for breakdown in the percolation model should be field dependent.</description><identifier>ISBN: 9780780352209</identifier><identifier>ISBN: 0780352203</identifier><identifier>DOI: 10.1109/RELPHY.1999.761592</identifier><language>eng</language><publisher>IEEE</publisher><subject>Breakdown voltage ; Charge carrier processes ; Design for quality ; Electric breakdown ; Electron traps ; History ; Laboratories ; Stress ; Testing ; Ultra large scale integration</subject><ispartof>1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. 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We use field dependent hopping conduction to explain why the critical trap density for breakdown in the percolation model should be field dependent.</description><subject>Breakdown voltage</subject><subject>Charge carrier processes</subject><subject>Design for quality</subject><subject>Electric breakdown</subject><subject>Electron traps</subject><subject>History</subject><subject>Laboratories</subject><subject>Stress</subject><subject>Testing</subject><subject>Ultra large scale integration</subject><isbn>9780780352209</isbn><isbn>0780352203</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1999</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj81KxDAUhQMiKGNfYFZ5gdb8Ns1SyowjFBTRhash6b3RaG1LGtB5ewvj4cCBb3HgI2TLWcU5s7fPu-7p8FZxa21laq6tuCCFNQ1bK7UQzF6RYlk-2Rqlma3FNWn3EQeggDOOgGOmfYo59m6gObl55eMS84mGKdH8EUf67jLS6TcCUp_QfcH0M96Qy-CGBYv_3ZDX_e6lPZTd4_1De9eVkRuRS183KnAHCozWUgcmett76ZUCjhI9B1071qwmxoXAUKBrQCLUBq0yNsgN2Z5_IyIe5xS_XTodz6byD-xHSlU</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Cheung, K.P.</creator><creator>Liu, C.T.</creator><creator>Chang, C.-P.</creator><creator>Colonell, J.I.</creator><creator>Lai, W.Y.-C.</creator><creator>Liu, R.</creator><creator>Miner, J.F.</creator><creator>Pai, C.S.</creator><creator>Vaidya, H.</creator><creator>Clemens, J.T.</creator><creator>Hasegawa, E.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>1999</creationdate><title>Field dependent critical trap density for thin gate oxide breakdown</title><author>Cheung, K.P. ; Liu, C.T. ; Chang, C.-P. ; Colonell, J.I. ; Lai, W.Y.-C. ; Liu, R. ; Miner, J.F. ; Pai, C.S. ; Vaidya, H. ; Clemens, J.T. ; Hasegawa, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-b684f1ad4d75535f02c9cb3b44d1e3eb1d56a081097aff0e2ea8d3ed67e9479f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Breakdown voltage</topic><topic>Charge carrier processes</topic><topic>Design for quality</topic><topic>Electric breakdown</topic><topic>Electron traps</topic><topic>History</topic><topic>Laboratories</topic><topic>Stress</topic><topic>Testing</topic><topic>Ultra large scale integration</topic><toplevel>online_resources</toplevel><creatorcontrib>Cheung, K.P.</creatorcontrib><creatorcontrib>Liu, C.T.</creatorcontrib><creatorcontrib>Chang, C.-P.</creatorcontrib><creatorcontrib>Colonell, J.I.</creatorcontrib><creatorcontrib>Lai, W.Y.-C.</creatorcontrib><creatorcontrib>Liu, R.</creatorcontrib><creatorcontrib>Miner, J.F.</creatorcontrib><creatorcontrib>Pai, C.S.</creatorcontrib><creatorcontrib>Vaidya, H.</creatorcontrib><creatorcontrib>Clemens, J.T.</creatorcontrib><creatorcontrib>Hasegawa, E.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Cheung, K.P.</au><au>Liu, C.T.</au><au>Chang, C.-P.</au><au>Colonell, J.I.</au><au>Lai, W.Y.-C.</au><au>Liu, R.</au><au>Miner, J.F.</au><au>Pai, C.S.</au><au>Vaidya, H.</au><au>Clemens, J.T.</au><au>Hasegawa, E.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Field dependent critical trap density for thin gate oxide breakdown</atitle><btitle>1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. 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| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 9780780352209 |
| ispartof | 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296), 1999, p.52-56 |
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| language | eng |
| recordid | cdi_ieee_primary_761592 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Breakdown voltage Charge carrier processes Design for quality Electric breakdown Electron traps History Laboratories Stress Testing Ultra large scale integration |
| title | Field dependent critical trap density for thin gate oxide breakdown |
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