High-Brightness Blue & Green LEDs Grown by MBE on ZnSe Substrates

High-brightness blue and green tight-emitting diodes (LEDs) operating at peak wavelengths in the range 489 -514 nm have been successfully synthesized, processed, and tested. The high-brightness LEDs are Il-VI heterostructures grown by molecular beam epitaxy (MBE) at NCSU using (100) ZnSe substrates...

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Bibliographic Details
Main Authors: Eason, D.B., Yu, Z., Hughes, W.C., Bon, C., Cook, J.W., Schetzina, J.F., He, Y.W., Masry, N.A.E., Cantwell, G., Harsch, W.C.
Format: Conference Proceeding
Language:English
Subjects:
Degradation
DH-HEMTs
Laboratories
Light emitting diodes
Molecular beam epitaxial growth
Optical devices
Optical microscopy
Substrates
Testing
Zinc compounds
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Summary:High-brightness blue and green tight-emitting diodes (LEDs) operating at peak wavelengths in the range 489 -514 nm have been successfully synthesized, processed, and tested. The high-brightness LEDs are Il-VI heterostructures grown by molecular beam epitaxy (MBE) at NCSU using (100) ZnSe substrates produced at Eagle-Picher Laboratory by the Seeded Physical Vapor Transport (SPVT TM) process.
DOI:10.1109/LEOSST.1995.763989