Characterization of He-plasma-assisted GSMBE InGaAsP

In this paper, we present the properties of InGaAsP (1.55 /spl mu/m) grown by He-plasma-assisted GSMBE. Variable energy positron annihilation studies, room temperature hall effect measurements and SIMS analysis have been performed. It is evident that this material contains traps which reduce the car...

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Bibliographic Details
Main Authors: Pinkney, H., Thompson, D.A., Robinson, B.J., Simpson, P.J., Myler, U., Streater, R.W.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Doping
Electrons
Plasma materials processing
Plasma properties
Plasma temperature
Positrons
Scattering parameters
Substrates
Temperature measurement
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Summary:In this paper, we present the properties of InGaAsP (1.55 /spl mu/m) grown by He-plasma-assisted GSMBE. Variable energy positron annihilation studies, room temperature hall effect measurements and SIMS analysis have been performed. It is evident that this material contains traps which reduce the carrier concentration in both doped and undoped samples, open volume defects which enlarge upon anneal, and a small concentration of hydrogen, all of which may play a role in the behavior of this novel material.
ISSN:1092-8669
DOI:10.1109/ICIPRM.1999.773655