50 to 70 GHz InP/InGaAs HBT amplifier with 20 dB gain

In this paper the design and a complete characterization of an InP/InGaAs single heterojunction bipolar (SHBT) mm-wave amplifier is described. The circuit is designed for the 60 GHz band allocated for wireless LAN and mobile communications. The amplifier achieves a gain of 20 dB from 50 GHz to 70 GH...

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Bibliographic Details
Main Authors: Morf, T., Huber, D., Huber, A., Schwarz, V., Jackel, H.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
Frequency
Gain
Heterojunction bipolar transistors
Indium gallium arsenide
Indium phosphide
MIM capacitors
Optical amplifiers
Resistors
Scattering parameters
Online Access:Request full text
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Description
Summary:In this paper the design and a complete characterization of an InP/InGaAs single heterojunction bipolar (SHBT) mm-wave amplifier is described. The circuit is designed for the 60 GHz band allocated for wireless LAN and mobile communications. The amplifier achieves a gain of 20 dB from 50 GHz to 70 GHz. Beside S-parameter noise and gain compression measurements are presented. No comparable HBT amplifier at 60 GHz could be found in literature.
ISSN:1092-8669
DOI:10.1109/ICIPRM.1999.773725