Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology

DMILL technology integrates mixed analog-digital very rad-hard (>10 Mrad and >10/sup 14/ neutron/cm/sup 2/) vertical bipolar, 0.8 /spl mu/m CMOS and 1.2 /spl mu/m PJFET transistors on SOI substrate. In this paper, after a presentation of the DMILL program goal, we discuss more into details the...

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Main Authors: Dentan, M., Abbon, P., Borgeaud, P., Delagnes, E., Fourches, N., Lachartre, D., Lugiez, F., Paul, B., Rouger, M., Truche, R., Blanc, J.P., Faynot, O., Leroux, C., Delevoye-Orsier, E., Pelloie, J.L., de Pontcharra, J., Flament, O., Guebhard, J.M., Leray, J.L., Montaron, J., Musseau, O., Vitez, A., Le Mouellic, C., Corbiere, T., Dantec, A., Festes, G., Martinez, J., Rodde, K.
Format: Conference Proceeding
Language:English
Subjects:
Aerospace industry
Analog-digital conversion
Circuits
CMOS technology
Foundries
Large Hadron Collider
Microelectronics
Radiation hardening
Space technology
Springs
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Summary:DMILL technology integrates mixed analog-digital very rad-hard (>10 Mrad and >10/sup 14/ neutron/cm/sup 2/) vertical bipolar, 0.8 /spl mu/m CMOS and 1.2 /spl mu/m PJFET transistors on SOI substrate. In this paper, after a presentation of the DMILL program goal, we discuss more into details the main technological choices, the main milestones from the R&D to the industrial implementation, and the main results obtained after stabilization of the final process-flow in the MHS foundry.
ISSN:1082-3654
2577-0829
DOI:10.1109/NSSMIC.1998.774298