Analysis of edge-coupled heterojunction phototransistors

The optical and electrical performance of edge-coupled InGaAs-InP heterojunction phototransistors (HPT's), suitable for detector/mixer applications in millimeter wave radio-fiber systems, has been analyzed. It is shown that the performance can be strongly dependent on the polarization of the in...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1999-07, Vol.47 (7), p.1289-1296
Main Authors: Allsopp, D.W.E., Stern, M.S., Strobel, E.
Format: Article
Language:English
Subjects:
Emittance
Frequency
Gain
Heterojunctions
High speed optical techniques
Mathematical analysis
Microwaves
Mixers
Optical coupling
Optical devices
Optical mixing
Optical waveguides
Optimization
Photoconductivity
Phototransistors
Stimulated emission
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Summary:The optical and electrical performance of edge-coupled InGaAs-InP heterojunction phototransistors (HPT's), suitable for detector/mixer applications in millimeter wave radio-fiber systems, has been analyzed. It is shown that the performance can be strongly dependent on the polarization of the incident light, unless the emitter layer is sufficiently thick. A new analytical model for the optical gain of edge-coupled HPT's is developed for strongly confined waveguide modes supported by the heterostructure. The model is shown to be useful for rapid optimization of the epitaxial structure for high transit frequency and high optical gain.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.775468