Low-Frequency Noise Characteristics in SONOS Flash Memory With Vertically Stacked Nanowire FETs

Low-frequency (LF) noise in a vertically stacked nanowire (VS-NW) memory device, which is based on the silicon-oxide-nitride-oxide-silicon (SONOS) configuration is characterized in two different operational modes, an inversion-mode and a junctionless-mode (JM). The LF noise showed 1/f -shape behavio...

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Bibliographic Details
Published in:IEEE electron device letters 2017-01, Vol.38 (1), p.40-43
Main Authors: Bang, Tewook, Lee, Byung-Hyun, Kim, Choong-Ki, Ahn, Dae-Chul, Jeon, Seung-Bae, Kang, Min-Ho, Oh, Jae-Sub, Choi, Yang-Kyu
Format: Article
Language:English
Subjects:
Field effect transistors
Gallium arsenide
Gate-all-around (GAA)
inversion-mode (IM)
Ions
junctionless-mode (JM)
Logic gates
low-frequency (LF) noise
Low-frequency noise
one-route all-dry etch
Silicon
SONOS
SONOS devices
vertically stacked nanowire (VS-NW)
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Summary:Low-frequency (LF) noise in a vertically stacked nanowire (VS-NW) memory device, which is based on the silicon-oxide-nitride-oxide-silicon (SONOS) configuration is characterized in two different operational modes, an inversion-mode and a junctionless-mode (JM). The LF noise showed 1/f -shape behavior regardless of the operational mode and followed the carrier number fluctuation model. With regard to the device-to-device variation and quality degradation of the LF noise after iterative program/erase operations, the five-story JM SONOS memory showed comparatively high immunity arising from its inherent bulk conduction and no-junction feature. Despite the harsh fabrication condition used to construct five-story VS-NW, even the five-story JM SONOS memory exhibited LF noise characteristics comparable to those of one-story JM SONOS memory. Thus, the five-story JM SONOS memory is attractive due to its high-performance capabilities and good scalability.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2632182