Photosensitive Full-Swing Multi-Layer MoS2 Inverters With Light Shielding Layers

Multi-layered MoS 2 inverters with light shielding layers were fabricated and demonstrated for application in highly sensitive photodetectors, exploiting the particular advantages of an atomically thin layer and a sizable electrical bandgap. The photoleakage behaviors of the inverters under changing...

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Bibliographic Details
Published in:IEEE electron device letters 2017-01, Vol.38 (1), p.67-70
Main Authors: Jae Hyeon Ryu, Geun-Woo Baek, Seung Jae Yu, Seung Gi Seo, Sung Hun Jin
Format: Article
Language:English
Subjects:
Inverters
light shielding layers
Lighting
Logic gates
low noise margin
Molybdenum
MoS<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 FETs
Photosensitive inverters
Sulfur
Thin film transistors
voltage transfer characteristics
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Summary:Multi-layered MoS 2 inverters with light shielding layers were fabricated and demonstrated for application in highly sensitive photodetectors, exploiting the particular advantages of an atomically thin layer and a sizable electrical bandgap. The photoleakage behaviors of the inverters under changing wavelengths of light were experimentally demonstrated to occur in a controlled manner and were analytically validated by load-line analysis. When the inverters were operated with a depletion load in the light of blue light emitting diodes, the low noise margin and transition width were significantly enhanced, by approximately 20% and 220%, respectively, as compared with those of the inverters in the dark.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2633479