Thresholdless lasing of nitride nanobeam cavities on silicon

We present a temperature dependent optical and quantum-optical characterization of close-to-ideal lasing in GaN-based nanobeam cavities. Measuring the photon statistics of emission allows us to prove high-β lasing at room temperature, and thresholdless lasing at 156K. Thresholdless lasing is explain...

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Bibliographic Details
Main Authors: Jagsch, Stefan Thomas, Trivino, Noelia Vico, Callsen, Gordon, Kalinowski, Stefan, Rousseau, Ian Michael, Carlin, Jean-Francois, Butte, Raphael, Hoffmann, Axel, Grandjean, Nicolas, Reitzenstein, Stephan
Format: Conference Proceeding
Language:English
Subjects:
Cavity resonators
High-β lasing
Lasers
Nanobeam
Nitride on Silicon1
Photon Statistics
Photonics
Silicon
Temperature
Temperature dependence
Temperature measurement
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Summary:We present a temperature dependent optical and quantum-optical characterization of close-to-ideal lasing in GaN-based nanobeam cavities. Measuring the photon statistics of emission allows us to prove high-β lasing at room temperature, and thresholdless lasing at 156K. Thresholdless lasing is explained via temperature dependent carrier redistribution in the 0D/2D gain medium.
ISSN:1947-6981