Strain balancing of MOVPE InAs/GaAs quantum dots using GaAs0.8P0.2

MOVPE growth of stacked InAs/GaAs QDs with and without GaAs 0.8 P 0.2 strain balancing layers has been studied. The GaAsP layers reduce the accumulated strain whilst maintaining the electrical characteristics. This should enable closer stacking of QD layers leading to higher gain and improved laser...

Full description

Saved in:
Bibliographic Details
Main Authors: Roberts, Timothy S., Stevens, Benjamin J., Clarke, Edmund, Tooley, Ian, Orchard, Jonathan, Farrer, Ian, Childs, David T. D., Babazadeh, Nasser, Ozaki, Nobuhiko, Mowbray, David, Hogg, Richard A.
Format: Conference Proceeding
Language:English
Subjects:
Epitaxial growth
Epitaxial layers
Quantum dot lasers
Stacking
Strain
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:MOVPE growth of stacked InAs/GaAs QDs with and without GaAs 0.8 P 0.2 strain balancing layers has been studied. The GaAsP layers reduce the accumulated strain whilst maintaining the electrical characteristics. This should enable closer stacking of QD layers leading to higher gain and improved laser performance.
ISSN:1947-6981