Strain balancing of MOVPE InAs/GaAs quantum dots using GaAs0.8P0.2

MOVPE growth of stacked InAs/GaAs QDs with and without GaAs 0.8 P 0.2 strain balancing layers has been studied. The GaAsP layers reduce the accumulated strain whilst maintaining the electrical characteristics. This should enable closer stacking of QD layers leading to higher gain and improved laser...

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Main Authors: Roberts, Timothy S., Stevens, Benjamin J., Clarke, Edmund, Tooley, Ian, Orchard, Jonathan, Farrer, Ian, Childs, David T. D., Babazadeh, Nasser, Ozaki, Nobuhiko, Mowbray, David, Hogg, Richard A.
Format: Conference Proceeding
Language:English
Subjects:
Epitaxial growth
Epitaxial layers
Quantum dot lasers
Stacking
Strain
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creator Roberts, Timothy S.
Stevens, Benjamin J.
Clarke, Edmund
Tooley, Ian
Orchard, Jonathan
Farrer, Ian
Childs, David T. D.
Babazadeh, Nasser
Ozaki, Nobuhiko
Mowbray, David
Hogg, Richard A.
description MOVPE growth of stacked InAs/GaAs QDs with and without GaAs 0.8 P 0.2 strain balancing layers has been studied. The GaAsP layers reduce the accumulated strain whilst maintaining the electrical characteristics. This should enable closer stacking of QD layers leading to higher gain and improved laser performance.
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source Alma/SFX Local Collection
subjects Epitaxial growth
Epitaxial layers
Quantum dot lasers
Stacking
Strain
title Strain balancing of MOVPE InAs/GaAs quantum dots using GaAs0.8P0.2
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