Feasibility of InxGa1-xAs High Mobility Channel for 3-D NAND Memory

Epitaxial In x Ga 1-x As is grown by metal organic vapor phase epitaxy as replacement of polycrystalline silicon (Si) channel for high-density 3-D NAND memory applications. The most challenging steps to integrate In x Ga 1-x As are thoroughly discussed; their impact on the electrical performances ar...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-01, Vol.64 (1), p.130-136
Main Authors: Capogreco, E., Subirats, A., Lisoni, J. G., Arreghini, A., Kunert, B., Guo, W., Tan, C.-L, Delhougne, R., Van den bosch, G., De Meyer, K., Furnemont, A., Van Houdt, J.
Format: Article
Language:English
Subjects:
3-D NAND memory
Annealing
Epitaxial growth
In<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> x Ga<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">1– x As channel
Junctions
Logic gates
Metals
poly-Si
retention
Silicon
Substrates
surface preparation
transconductance (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <inline-formula> <tex-math notation="LaTeX"> g_{m} </tex-math> </inline-formula> )
tunnel oxide (TuOx)
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Summary:Epitaxial In x Ga 1-x As is grown by metal organic vapor phase epitaxy as replacement of polycrystalline silicon (Si) channel for high-density 3-D NAND memory applications. The most challenging steps to integrate In x Ga 1-x As are thoroughly discussed; their impact on the electrical performances are investigated and the tunnel oxide (TuOx) quality is assessed. In x Ga 1-x As channels with a diameter down to ~45 nm and different In concentrations are obtained after using two alternative surface preparation routes: HCl and Cl 2 . Thanks to the lower thermal budget involved, Cl 2 seems the most suitable route to preserve the thickness of the TuOx. In x Ga 1-x As channels with In concentration, x, higher than 0.45 have superior conduction properties compared with poly-Si channel, showing higher ION and transconductance.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2633388