High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

This letter demonstrates quasi- and fully vertical GaN-on-Si pn diodes with record performance. The optimized device structure employs a highly conductive (N D >10 20 cm -3 ) current collecting layer and a lightly carbon-doped drift layer. With this optimization, a differential specific on-resist...

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Bibliographic Details
Published in:IEEE electron device letters 2017-02, Vol.38 (2), p.248-251
Main Authors: Yuhao Zhang, Piedra, Daniel, Min Sun, Hennig, Jonas, Dadgar, Armin, Lili Yu, Palacios, Tomas
Format: Article
Language:English
Subjects:
Gallium nitride
GaN-on-Si
high breakdown voltage
high forward current
high-temperature operation
Leakage currents
low on-resistance
P-i-n diodes
Performance evaluation
power electronics
reverse recovery time
Schottky diodes
Silicon
Substrates
vertical pn diodes
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Summary:This letter demonstrates quasi- and fully vertical GaN-on-Si pn diodes with record performance. The optimized device structure employs a highly conductive (N D >10 20 cm -3 ) current collecting layer and a lightly carbon-doped drift layer. With this optimization, a differential specific on-resistance (R ON ) of 0.8-1 mΩ·cm 2 , a breakdown voltage (BV) over 500 V, and a high forward current (~kA/cm 2 ) were demonstrated. Excellent R ON and BV performance up to 300 °C were also obtained. A small reverse recovery time of 50 ns was demonstrated under switching conditions. With Baliga's figure of merit over 0.32 GW/cm 2 , these devices show the great potential of low-cost GaN-onSi vertical devices for future power applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2646669