Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications

Next-generation power amplifiers must operate at lower supply voltages without sacrificing linearity or efficiency. GaInP/GaAs double-heterojunction bipolar transistors with GaInP collectors can improve over GaAs single-heterojunction bipolar transistors (HBTs) in power-amplifier applications, based...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1999-08, Vol.47 (8), p.1433-1438
Main Authors: Pin-Fan Chen, Hsin, U.-M.T., Welty, R.J., Asbeck, P.M., Pierson, R.L., Zampardi, P.J., Ho, W.-J., Vincent Ho, M.C., Chang, M.F.
Format: Article
Language:English
Subjects:
Bipolar transistors
Breakdown voltage
Costs
Electric fields
Electric potential
Gallium arsenide
Gallium arsenides
Linearity
Manufacturing
Microwave devices
Power amplifiers
Semiconductor devices
Thermal management
Voltage
Wireless communication
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Next-generation power amplifiers must operate at lower supply voltages without sacrificing linearity or efficiency. GaInP/GaAs double-heterojunction bipolar transistors with GaInP collectors can improve over GaAs single-heterojunction bipolar transistors (HBTs) in power-amplifier applications, based on lower offset voltage, increased breakdown electric field, and absence of saturation charge storage. To best exploit these characteristics, amplifier architectures that employ HBTs in switching mode can be used.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.780391