Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures

Thin-film lateral SOI p-i-n diodes can be used as photodetectors especially in the wavelength range of blue and ultra-violet (UV) radiation. Unlike vertical devices, lateral diodes can have depletion regions very close to the device surface, where the absorption of low-wavelengths radiation takes pl...

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Bibliographic Details
Published in:IEEE sensors journal 2017-03, Vol.17 (6), p.1641-1648
Main Authors: Novo, Carla, Buhler, Rudolf, Baptista, Joao, Giacomini, Renato, Afzalian, Aryan, Flandre, Denis
Format: Article
Language:English
Subjects:
Dark current
Fingers
intrinsic length
Photodiode
Photometers
photosensitive
PIN
PIN diodes
PIN photodiodes
Pins
Quantum efficiency
Radiative recombination
Silicon
Temperature measurement
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Summary:Thin-film lateral SOI p-i-n diodes can be used as photodetectors especially in the wavelength range of blue and ultra-violet (UV) radiation. Unlike vertical devices, lateral diodes can have depletion regions very close to the device surface, where the absorption of low-wavelengths radiation takes place. Due to this proximity to the surface, an MOS back-gate can control the charge density inside this region, allowing quantum efficiency improvement. This paper reports experimental results of SOI p-i-n photodetectors with different intrinsic lengths in the 300-500-K range, simultaneously considering back-gate bias and temperature influences. Indeed, the back-gate bias becomes very effective in terms of quantum efficiency control with up to 52.4% for L I = 1μm at T = 500 K in inversion mode, while in accumulation, the resulting efficiency was 48.2% at T = 500 K for the device with L I = 10 μm at UV. These variations are related to the behavior of dark current and the recombination rate of the devices.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2017.2647848