A 0.92-THz SiGe Power Radiator Based on a Nonlinear Theory for Harmonic Generation

We propose a nonlinear device model and a systematic methodology to generate maximum power at any desired harmonic. The proposed power optimization technique is based on the Volterra-Wiener theory of nonlinear systems. By manipulating the device nonlinearity and optimizing the embedding network, opt...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of solid-state circuits 2017-02, Vol.52 (2), p.406-422
Main Authors: Aghasi, Hamidreza, Cathelin, Andreia, Afshari, Ehsan
Format: Article
Language:English
Subjects:
Device nonlinearity
frequency multiplier
frequency quadrupler
Harmonic analysis
harmonic power
Integrated circuit modeling
optimum activity conditions
Power generation
power maximization
power radiators
Power system harmonics
Predictive models
SiGe
terahertz (THz)
Topology
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We propose a nonlinear device model and a systematic methodology to generate maximum power at any desired harmonic. The proposed power optimization technique is based on the Volterra-Wiener theory of nonlinear systems. By manipulating the device nonlinearity and optimizing the embedding network, optimum conditions for harmonic power generation are provided. Using this theory, a 920-944-GHz frequency quadrupler is designed in a 130-nm SiGe:C process. The circuit achieves the peak output power of -17.3 and -10 dBm of effective isotropic radiated power and consumes 5.7 mW of dc power. To the best of our knowledge, this circuit demonstrates the highest generated power among Si/SiGe-based sources at this frequency range.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2016.2627547