Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers

The effect of different carbon doping techniques on the dynamic behavior of GaN-on-Si buffer was investigated. Intentional doping using a hydrocarbon precursor was compared with the more common autodoping technique. Breakdown and dynamic behavior of processed devices indicate that extrinsic carbon d...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-03, Vol.64 (3), p.991-997
Main Authors: Yacoub, H., Mauder, C., Leone, S., Eickelkamp, M., Fahle, D., Heuken, M., Kalisch, H., Vescan, A.
Format: Article
Language:English
Subjects:
Back gate
Buffers
Carbon
carbon doping
Crystals
Current measurement
Doping
dynamic behavior
Electron traps
Gallium nitride
Gallium nitrides
GaN on silicon (GaN-on-Si)
Temperature measurement
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Summary:The effect of different carbon doping techniques on the dynamic behavior of GaN-on-Si buffer was investigated. Intentional doping using a hydrocarbon precursor was compared with the more common autodoping technique. Breakdown and dynamic behavior of processed devices indicate that extrinsic carbon doping delivers better dynamic properties for the same blocking voltage capabilities. Modeling and simulations have revealed that charge transport across the GaN buffer is the main limiting factor during the buffer discharge process.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2647841