A 280-GHz 10-dBm Signal Source Based on InP HBT Technology

A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2017-02, Vol.27 (2), p.159-161
Main Authors: Yun, Jongwon, Kim, Jungsoo, Rieh, Jae-Sung
Format: Article
Language:English
Subjects:
Couplers
Couplings
Heterojunction bipolar transistors
III-V semiconductor materials
Indium phosphide
injection locked oscillators
Oscillators
Power combiners
power combining
Power consumption
Power generation
Semiconductor devices
submillimeter wave integrated circuits
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Summary:A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2016.2646928