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A 280-GHz 10-dBm Signal Source Based on InP HBT Technology

A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat...

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Published in:	IEEE microwave and wireless components letters 2017-02, Vol.27 (2), p.159-161
Main Authors:	Yun, Jongwon, Kim, Jungsoo, Rieh, Jae-Sung
Format:	Article
Language:	English
Subjects:	Couplers Couplings Heterojunction bipolar transistors III-V semiconductor materials Indium phosphide injection locked oscillators Oscillators Power combiners power combining Power consumption Power generation Semiconductor devices submillimeter wave integrated circuits
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cited_by	cdi_FETCH-LOGICAL-c293t-3975e51d934fae8642181fc2c9cd3fd973458faa4eef052b39e3a12bf0a619183
cites	cdi_FETCH-LOGICAL-c293t-3975e51d934fae8642181fc2c9cd3fd973458faa4eef052b39e3a12bf0a619183
container_end_page	161
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container_title	IEEE microwave and wireless components letters
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creator	Yun, Jongwon Kim, Jungsoo Rieh, Jae-Sung
description	A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).
doi_str_mv	10.1109/LMWC.2016.2646928
format	article
fullrecord	<record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_ieee_primary_7827139</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7827139</ieee_id><sourcerecordid>1868427490</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-3975e51d934fae8642181fc2c9cd3fd973458faa4eef052b39e3a12bf0a619183</originalsourceid><addsrcrecordid>eNo9kMFOAjEURRujiYh-gHHTxHWxr-10WndAFEgwmoBx2ZTOK0JgBqewwK93JhBX7y3Ovbk5hNwD7wFw-zR9-xr2BAfdE1ppK8wF6UCWGQa5VpftL4GB5Paa3KS05hyUUdAhz30qDGej8S8FzorBls5Wy9Jv6Kw61AHpwCcsaFXSSflBx4M5nWP4LqtNtTzekqvoNwnvzrdLPl9f5sMxm76PJsP-lAVh5Z5Jm2eYQWGlih6NVgIMxCCCDYWMhc2lykz0XiFGnomFtCg9iEXkXoMFI7vk8dS7q6ufA6a9Wzfbmo3JgdFGiVxZ3lBwokJdpVRjdLt6tfX10QF3rSLXKnKtIndW1GQeTpkVIv7zuRE5SCv_ADoyXf4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1868427490</pqid></control><display><type>article</type><title>A 280-GHz 10-dBm Signal Source Based on InP HBT Technology</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Yun, Jongwon ; Kim, Jungsoo ; Rieh, Jae-Sung</creator><creatorcontrib>Yun, Jongwon ; Kim, Jungsoo ; Rieh, Jae-Sung</creatorcontrib><description>A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2016.2646928</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Couplers ; Couplings ; Heterojunction bipolar transistors ; III-V semiconductor materials ; Indium phosphide ; injection locked oscillators ; Oscillators ; Power combiners ; power combining ; Power consumption ; Power generation ; Semiconductor devices ; submillimeter wave integrated circuits</subject><ispartof>IEEE microwave and wireless components letters, 2017-02, Vol.27 (2), p.159-161</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-3975e51d934fae8642181fc2c9cd3fd973458faa4eef052b39e3a12bf0a619183</citedby><cites>FETCH-LOGICAL-c293t-3975e51d934fae8642181fc2c9cd3fd973458faa4eef052b39e3a12bf0a619183</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7827139$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Yun, Jongwon</creatorcontrib><creatorcontrib>Kim, Jungsoo</creatorcontrib><creatorcontrib>Rieh, Jae-Sung</creatorcontrib><title>A 280-GHz 10-dBm Signal Source Based on InP HBT Technology</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).</description><subject>Couplers</subject><subject>Couplings</subject><subject>Heterojunction bipolar transistors</subject><subject>III-V semiconductor materials</subject><subject>Indium phosphide</subject><subject>injection locked oscillators</subject><subject>Oscillators</subject><subject>Power combiners</subject><subject>power combining</subject><subject>Power consumption</subject><subject>Power generation</subject><subject>Semiconductor devices</subject><subject>submillimeter wave integrated circuits</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNo9kMFOAjEURRujiYh-gHHTxHWxr-10WndAFEgwmoBx2ZTOK0JgBqewwK93JhBX7y3Ovbk5hNwD7wFw-zR9-xr2BAfdE1ppK8wF6UCWGQa5VpftL4GB5Paa3KS05hyUUdAhz30qDGej8S8FzorBls5Wy9Jv6Kw61AHpwCcsaFXSSflBx4M5nWP4LqtNtTzekqvoNwnvzrdLPl9f5sMxm76PJsP-lAVh5Z5Jm2eYQWGlih6NVgIMxCCCDYWMhc2lykz0XiFGnomFtCg9iEXkXoMFI7vk8dS7q6ufA6a9Wzfbmo3JgdFGiVxZ3lBwokJdpVRjdLt6tfX10QF3rSLXKnKtIndW1GQeTpkVIv7zuRE5SCv_ADoyXf4</recordid><startdate>20170201</startdate><enddate>20170201</enddate><creator>Yun, Jongwon</creator><creator>Kim, Jungsoo</creator><creator>Rieh, Jae-Sung</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20170201</creationdate><title>A 280-GHz 10-dBm Signal Source Based on InP HBT Technology</title><author>Yun, Jongwon ; Kim, Jungsoo ; Rieh, Jae-Sung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-3975e51d934fae8642181fc2c9cd3fd973458faa4eef052b39e3a12bf0a619183</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Couplers</topic><topic>Couplings</topic><topic>Heterojunction bipolar transistors</topic><topic>III-V semiconductor materials</topic><topic>Indium phosphide</topic><topic>injection locked oscillators</topic><topic>Oscillators</topic><topic>Power combiners</topic><topic>power combining</topic><topic>Power consumption</topic><topic>Power generation</topic><topic>Semiconductor devices</topic><topic>submillimeter wave integrated circuits</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yun, Jongwon</creatorcontrib><creatorcontrib>Kim, Jungsoo</creatorcontrib><creatorcontrib>Rieh, Jae-Sung</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library Online</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yun, Jongwon</au><au>Kim, Jungsoo</au><au>Rieh, Jae-Sung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 280-GHz 10-dBm Signal Source Based on InP HBT Technology</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2017-02-01</date><risdate>2017</risdate><volume>27</volume><issue>2</issue><spage>159</spage><epage>161</epage><pages>159-161</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%).</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LMWC.2016.2646928</doi><tpages>3</tpages></addata></record>
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source	IEEE Electronic Library (IEL) Journals
subjects	Couplers Couplings Heterojunction bipolar transistors III-V semiconductor materials Indium phosphide injection locked oscillators Oscillators Power combiners power combining Power consumption Power generation Semiconductor devices submillimeter wave integrated circuits
title	A 280-GHz 10-dBm Signal Source Based on InP HBT Technology
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T00%3A30%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20280-GHz%2010-dBm%20Signal%20Source%20Based%20on%20InP%20HBT%20Technology&rft.jtitle=IEEE%20microwave%20and%20wireless%20components%20letters&rft.au=Yun,%20Jongwon&rft.date=2017-02-01&rft.volume=27&rft.issue=2&rft.spage=159&rft.epage=161&rft.pages=159-161&rft.issn=1531-1309&rft.eissn=1558-1764&rft.coden=IMWCBJ&rft_id=info:doi/10.1109/LMWC.2016.2646928&rft_dat=%3Cproquest_ieee_%3E1868427490%3C/proquest_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c293t-3975e51d934fae8642181fc2c9cd3fd973458faa4eef052b39e3a12bf0a619183%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1868427490&rft_id=info:pmid/&rft_ieee_id=7827139&rfr_iscdi=true