A new modeling and simulation capability for statistical analysis of the radiation hardness of integrated circuits

An engineering-based model has been developed that statistically simulates the effects of radiation on integrated circuits. Prototype software has been developed that facilitates these simulations and includes the statistical analysis of performance parameter degradation.

Saved in:
Bibliographic Details
Main Authors: Hess, G.T., Sanders, T.J., Means, D.P.
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Circuit simulation
Doping
Equations
Integrated circuit modeling
Physics
Radiation effects
Semiconductor device modeling
Software prototyping
Statistical analysis
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An engineering-based model has been developed that statistically simulates the effects of radiation on integrated circuits. Prototype software has been developed that facilitates these simulations and includes the statistical analysis of performance parameter degradation.
ISSN:0749-6877
2375-5350
DOI:10.1109/UGIM.1999.782852