Novel Snapback-Free Reverse-Conducting SOI-LIGBT With Dual Embedded Diodes

• Published in: IEEE transactions on electron devices 2017-03, Vol.64 (3), p.1187-1192
• Main Authors: Zhang, Long, Zhu, Jing, Sun, Weifeng, Chen, Meng, Zhao, Minna, Huang, Xuequan, Chen, Jiajun, Qian, Yuxiang, Shi, Longxing
• Format: Article
• Language: English
• Subjects: Anodes; Cathodes; Current density; Diodes; Electric breakdown; Electrons; Insulated gate bipolar transistors; Numerical models; P-i-n diodes; PIN diodes; Recovery time; Reverse conducting (RC); reverse recovery time; Semiconductor devices; silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT); snapback-free; SOI (semiconductors); US Department of Transportation
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2017.2648851

A novel 500 V reverse-conducting (RC) silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) with dual embedded diodes (DEDs) is proposed to eliminate the snapback, and its mechanism is investigated by simulation. The RC is realized by the internal diode, which consists of two p-i-n diodes (D1 and D2). The two diodes are connected in series. In the RC-state, the current flows through D1 first and then through D2. D2 is embedded in the anode region of the proposed DED-LIGBT and is fully isolated by the deep-oxide trench. In the forward conducting state, D2 is reverse biased and the electrons from the N + cathode can only flow into the P + anode. The DEDs reroute the electron current path, and thus, the snapback is avoided. Moreover, by adjusting the width of D2 (W b ), the internal diode of the DED structure achieves superior reverse recovery time (t rr ) and reverse recovery peak current (I rrm ) to the conventional SOI p-i-n diode.