Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs

Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm, SS = 52 mV/dec, hysteresis free (threshold voltage shift = 0.8 mV), and 0.65 nm CET (capacitance equivalent thickness). The NC-FinFET modeling is validated on standard 14nm Fin...

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Bibliographic Details
Main Authors: Lee, M. H., Fan, S.-T, Tang, C.-H, Chen, P.-G, Chou, Y.-C, Chen, H.-H, Kuo, J.-Y, Xie, M.-J, Liu, S.-N, Liao, M.-H, Jong, C.-A, Li, K.-S, Chen, M.-C, Liu, C. W.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Capacitance
FinFETs
Hysteresis
Iron
Logic gates
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Summary:Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm, SS = 52 mV/dec, hysteresis free (threshold voltage shift = 0.8 mV), and 0.65 nm CET (capacitance equivalent thickness). The NC-FinFET modeling is validated on standard 14nm FinFET. The transient behavior of gate and drain current response are exhibited with triangular gate voltage sweep. The dynamic NC model with compact equivalent circuit for ultra-thin FE-HZO is established with experimental data validation, and estimates the fast response. A feasible concept of coupling the ultra-thin FE-HZO (1.x nm) with NC as gate stack paves a promising solution for sub-10nm technology node.
ISSN:2156-017X
DOI:10.1109/IEDM.2016.7838400