Two-dimensional transistors based on MoS2 lateral heterostructures

We propose two types of transistors based on lateral heterostructures of metallic and semiconducting phases of monolayer MoS 2 , whose top-down patterning has been recently demonstrated via electron beam irradiation [1]. The proposed transistors a MoS2 lateral heterostructure FET, and a "planar...

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Bibliographic Details
Main Authors: Marian, D., Dib, E., Cusati, T., Fortunelli, A., Iannaccone, G., Fiori, G.
Format: Conference Proceeding
Language:English
Subjects:
Field effect transistors
Graphene
Logic gates
Molybdenum
Schottky diodes
Sulfur
Online Access:Request full text
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Summary:We propose two types of transistors based on lateral heterostructures of metallic and semiconducting phases of monolayer MoS 2 , whose top-down patterning has been recently demonstrated via electron beam irradiation [1]. The proposed transistors a MoS2 lateral heterostructure FET, and a "planar barristor", a gate Schottky diode that is the full 2D counterpart of the graphene barristor device proposed in [2]. We evaluate their performance with ab-initio simulations using as a benchmark the CMOS technology roadmap.
ISSN:2156-017X
DOI:10.1109/IEDM.2016.7838413