Be-related traps in Al/sub 0.5/Ga/sub 0.5/As MBE layers

In this paper we report on studies of deep levels in Be doped Al/sub 0.5/Ga/sub 0.5/As by deep level transient spectroscopy measurements. The aim of the studies was to investigate which of the observed hole traps may be Be related. For this purpose samples of four different Be concentrations ranging...

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Bibliographic Details
Main Authors: Szatkowski, J., Placzek-Popko, E., Sieranski, K., Hansen, O.P.
Format: Conference Proceeding
Language:English
Subjects:
Alloying
Effective mass
Frequency
Gallium arsenide
Molecular beam epitaxial growth
Ohmic contacts
Schottky barriers
Spectroscopy
Substrates
Temperature measurement
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Summary:In this paper we report on studies of deep levels in Be doped Al/sub 0.5/Ga/sub 0.5/As by deep level transient spectroscopy measurements. The aim of the studies was to investigate which of the observed hole traps may be Be related. For this purpose samples of four different Be concentrations ranging from 10/sup 15/ cm/sup -3/ to 10/sup 18/ cm/sup -3/ were prepared. For the samples of the highest Be concentration the DLTS measurements reveal the presence of four hole traps whereas in the others six traps are observed. Four of the observed traps can be attributed to Be incorporation.
DOI:10.1109/SIM.1998.785100