GaAs and SiC quantum wire arrays: fabrication and characterisation

We report a novel approach for fabrication of mesoscopic ordered arrays (networks) based on self-organized patterning in complex liquids (nitrocellulose solution). In order to prepare semiconductor quantum wire arrays the networks are used as masks for further reactive-ion-beam etching of GaAs surfa...

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Bibliographic Details
Main Authors: Samuilov, V.A., Bashmakov, I.A., Butylina, I.B., Grigorieva, I.M., Ksenevich, V.K., Solovjova, L.V.
Format: Conference Proceeding
Language:English
Subjects:
Epitaxial growth
Fabrication
Gallium arsenide
Liquids
Network synthesis
Quantum dots
Scanning electron microscopy
Silicon carbide
Spectroscopy
Wire
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Summary:We report a novel approach for fabrication of mesoscopic ordered arrays (networks) based on self-organized patterning in complex liquids (nitrocellulose solution). In order to prepare semiconductor quantum wire arrays the networks are used as masks for further reactive-ion-beam etching of GaAs surface or as a precursors for synthesis of SiC on the surface of Si. Auger electron spectroscopy carbon peaks of converted networks exhibit a fine structure typical for SiC.
DOI:10.1109/SIM.1998.785108