The voltage controlled current bistability (VCCB) in DUBAT

In this paper the voltage controlled current bistability (VCCB) hysteresis loop has been found in the I/sub C/-V/sub BE/ characteristics for the DUal BAse transistor (DUBAT). The ratio of high current to low current (R) is 945 and the width of bistability loop is 3.38 V. The minimum rise time t/sub...

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Bibliographic Details
Main Authors: Guo Weilian, Zheng Yuanfen, Song Yuxing, Zheng Yunguang, Li Shurong
Format: Conference Proceeding
Language:English
Subjects:
Bipolar transistors
Diodes
Hysteresis
Logic devices
Manufacturing
Random access memory
Resonance
Silicon
SRAM chips
Voltage control
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Summary:In this paper the voltage controlled current bistability (VCCB) hysteresis loop has been found in the I/sub C/-V/sub BE/ characteristics for the DUal BAse transistor (DUBAT). The ratio of high current to low current (R) is 945 and the width of bistability loop is 3.38 V. The minimum rise time t/sub /spl tau// of VCCB is near 40 ns. It is possible that VCCB of DUBAT can be used to make a Static Random Access Memories (SRAM) cell in the near future.
DOI:10.1109/ICSICT.1998.785848