A new simple method to optimize the parameters of deep-submicron MOSFETs

In this paper, we propose a new simple method to optimize the parameters of the deep-submicron MOSFETs, namely, maximizing the nominal driving current at constant worst case (i.e. considering technology fluctuation) off-state current. Although there are only one objective and one constraint in this...

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Bibliographic Details
Main Authors: Chen Wensong, Li Yenmei, Tian Lilin
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Constraint optimization
Design optimization
Fluctuations
Leakage current
Microelectronics
MOSFET circuits
Optimization methods
Scalability
Threshold voltage
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Summary:In this paper, we propose a new simple method to optimize the parameters of the deep-submicron MOSFETs, namely, maximizing the nominal driving current at constant worst case (i.e. considering technology fluctuation) off-state current. Although there are only one objective and one constraint in this optimizing procedure, the effects of subthreshold factor S, channel carrier mobility, source/drain resistance, drain induced barrier lowering (DIBL) and V/sub th/ roll-off are all considered. To demonstrate the capability of this method, it is used to optimize the source/drain junction depth for 0.1 /spl mu/m MOSFET. The results show that a junction depth as shallow as 0.02 /spl mu/m is needed to maximize the driving current for a uniform channel doped MOSFET.
DOI:10.1109/ICSICT.1998.785919