The influence of punch-through in lowly doped collector on base for npn SiGe base HBTs with high f/sub T

In this paper, we have presented quantitative expressions of the collector space-charge-region (SCR) width of SiGe base HBTs with a lowly doped punch-through collector. Calculated results show a discontinuity occurs at the critical point between no punch-through and punch-through. The influence of t...

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Bibliographic Details
Main Authors: Deyi Kong, Yao Li, Tongli Wei, Weidong Nie, Wensheng Qian
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Cutoff frequency
Doping
Germanium silicon alloys
Heterojunction bipolar transistors
Microelectronics
Silicon germanium
Substrates
Thyristors
Voltage
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Summary:In this paper, we have presented quantitative expressions of the collector space-charge-region (SCR) width of SiGe base HBTs with a lowly doped punch-through collector. Calculated results show a discontinuity occurs at the critical point between no punch-through and punch-through. The influence of the discontinuity on base and frequency performance has been discussed, Conclusions from our work may be also applicable to Si-BJTs.
DOI:10.1109/ICSICT.1998.786138