The influence of strain on the dielectric behavior of (Ba/sub x/Sr/sub 1-x/)Ti/sub 1+y/O/sub 3+z/ thin films grown by LS-MOCVD on Pt/SiO/sub 2//Si

The strain state and its coupling to dielectric behavior have been investigated for {100} BST thin films deposited on Pt/SiO/sub 2//Si at 640/spl deg/C. It is estimated from X-ray diffraction that the in-plane biaxial strain is approximately 0.7%. We postulate that this is of sufficient magnitude to...

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Bibliographic Details
Main Authors: Streiffer, S.K., Basceri, C., Parker, C.B., Lash, S.E., Christman, J., Maiwa, H., Kingon, A.I.
Format: Conference Proceeding
Language:English
Subjects:
Binary search trees
Capacitive sensors
Dielectric films
Dielectric substrates
Dielectric thin films
Polarization
Semiconductor thin films
Sputtering
Temperature
X-ray diffraction
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Summary:The strain state and its coupling to dielectric behavior have been investigated for {100} BST thin films deposited on Pt/SiO/sub 2//Si at 640/spl deg/C. It is estimated from X-ray diffraction that the in-plane biaxial strain is approximately 0.7%. We postulate that this is of sufficient magnitude to confine any spontaneous polarization to the plane of the film. The thickness-corrected dielectric behavior perpendicular to the substrate for these samples shows evidence of coupling to such an in-plane phase transition at approximately 390 K, as manifested by deviation from Curie-Weiss-like behavior at this temperature.
ISSN:1099-4734
2375-0448
DOI:10.1109/ISAF.1998.786629