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The influence of strain on the dielectric behavior of (Ba/sub x/Sr/sub 1-x/)Ti/sub 1+y/O/sub 3+z/ thin films grown by LS-MOCVD on Pt/SiO/sub 2//Si
The strain state and its coupling to dielectric behavior have been investigated for {100} BST thin films deposited on Pt/SiO/sub 2//Si at 640/spl deg/C. It is estimated from X-ray diffraction that the in-plane biaxial strain is approximately 0.7%. We postulate that this is of sufficient magnitude to...
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| creator | Streiffer, S.K. Basceri, C. Parker, C.B. Lash, S.E. Christman, J. Maiwa, H. Kingon, A.I. |
| description | The strain state and its coupling to dielectric behavior have been investigated for {100} BST thin films deposited on Pt/SiO/sub 2//Si at 640/spl deg/C. It is estimated from X-ray diffraction that the in-plane biaxial strain is approximately 0.7%. We postulate that this is of sufficient magnitude to confine any spontaneous polarization to the plane of the film. The thickness-corrected dielectric behavior perpendicular to the substrate for these samples shows evidence of coupling to such an in-plane phase transition at approximately 390 K, as manifested by deviation from Curie-Weiss-like behavior at this temperature. |
| doi_str_mv | 10.1109/ISAF.1998.786629 |
| format | conference_proceeding |
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It is estimated from X-ray diffraction that the in-plane biaxial strain is approximately 0.7%. We postulate that this is of sufficient magnitude to confine any spontaneous polarization to the plane of the film. The thickness-corrected dielectric behavior perpendicular to the substrate for these samples shows evidence of coupling to such an in-plane phase transition at approximately 390 K, as manifested by deviation from Curie-Weiss-like behavior at this temperature.</description><identifier>ISSN: 1099-4734</identifier><identifier>ISBN: 9780780349599</identifier><identifier>ISBN: 0780349598</identifier><identifier>EISSN: 2375-0448</identifier><identifier>DOI: 10.1109/ISAF.1998.786629</identifier><language>eng</language><publisher>IEEE</publisher><subject>Binary search trees ; Capacitive sensors ; Dielectric films ; Dielectric substrates ; Dielectric thin films ; Polarization ; Semiconductor thin films ; Sputtering ; Temperature ; X-ray diffraction</subject><ispartof>ISAF 1998. 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The thickness-corrected dielectric behavior perpendicular to the substrate for these samples shows evidence of coupling to such an in-plane phase transition at approximately 390 K, as manifested by deviation from Curie-Weiss-like behavior at this temperature.</description><subject>Binary search trees</subject><subject>Capacitive sensors</subject><subject>Dielectric films</subject><subject>Dielectric substrates</subject><subject>Dielectric thin films</subject><subject>Polarization</subject><subject>Semiconductor thin films</subject><subject>Sputtering</subject><subject>Temperature</subject><subject>X-ray diffraction</subject><issn>1099-4734</issn><issn>2375-0448</issn><isbn>9780780349599</isbn><isbn>0780349598</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNp9j01LxDAQhoMfYNHexdMclSVN0qTb5qiri4KyQovXpa2pG-mmknR168_wF5vdenYYZh54Z95hEDpnNGKMSvKQX88jJmUWpdl0GssDFMQ8TTAVIjtEoUwz6pMLmUh5hAK_IrFIuThBoXPv1IdIEl8C9FOsFGjTtBtlagVdA663pTbQGei99KpVq-re6hoqtSo_dWd3Q5c3JXGbCrYkt3tgeEuuCj3yZCCLPfHJN_E23q7R7drBm-2-DFQDPOb4aTF7ud2dee5Jrsf5mHg8Q8dN2ToV_vVTdDG_K2b3WCullh9Wr0s7LMfH-b_iL4BUVWc</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Streiffer, S.K.</creator><creator>Basceri, C.</creator><creator>Parker, C.B.</creator><creator>Lash, S.E.</creator><creator>Christman, J.</creator><creator>Maiwa, H.</creator><creator>Kingon, A.I.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>1998</creationdate><title>The influence of strain on the dielectric behavior of (Ba/sub x/Sr/sub 1-x/)Ti/sub 1+y/O/sub 3+z/ thin films grown by LS-MOCVD on Pt/SiO/sub 2//Si</title><author>Streiffer, S.K. ; Basceri, C. ; Parker, C.B. ; Lash, S.E. ; Christman, J. ; Maiwa, H. ; Kingon, A.I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_7866293</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Binary search trees</topic><topic>Capacitive sensors</topic><topic>Dielectric films</topic><topic>Dielectric substrates</topic><topic>Dielectric thin films</topic><topic>Polarization</topic><topic>Semiconductor thin films</topic><topic>Sputtering</topic><topic>Temperature</topic><topic>X-ray diffraction</topic><toplevel>online_resources</toplevel><creatorcontrib>Streiffer, S.K.</creatorcontrib><creatorcontrib>Basceri, C.</creatorcontrib><creatorcontrib>Parker, C.B.</creatorcontrib><creatorcontrib>Lash, S.E.</creatorcontrib><creatorcontrib>Christman, J.</creatorcontrib><creatorcontrib>Maiwa, H.</creatorcontrib><creatorcontrib>Kingon, A.I.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Streiffer, S.K.</au><au>Basceri, C.</au><au>Parker, C.B.</au><au>Lash, S.E.</au><au>Christman, J.</au><au>Maiwa, H.</au><au>Kingon, A.I.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The influence of strain on the dielectric behavior of (Ba/sub x/Sr/sub 1-x/)Ti/sub 1+y/O/sub 3+z/ thin films grown by LS-MOCVD on Pt/SiO/sub 2//Si</atitle><btitle>ISAF 1998. Proceedings of the Eleventh IEEE International Symposium on Applications of Ferroelectrics (Cat. No.98CH36245)</btitle><stitle>ISAF</stitle><date>1998</date><risdate>1998</risdate><spage>31</spage><epage>34</epage><pages>31-34</pages><issn>1099-4734</issn><eissn>2375-0448</eissn><isbn>9780780349599</isbn><isbn>0780349598</isbn><abstract>The strain state and its coupling to dielectric behavior have been investigated for {100} BST thin films deposited on Pt/SiO/sub 2//Si at 640/spl deg/C. It is estimated from X-ray diffraction that the in-plane biaxial strain is approximately 0.7%. We postulate that this is of sufficient magnitude to confine any spontaneous polarization to the plane of the film. The thickness-corrected dielectric behavior perpendicular to the substrate for these samples shows evidence of coupling to such an in-plane phase transition at approximately 390 K, as manifested by deviation from Curie-Weiss-like behavior at this temperature.</abstract><pub>IEEE</pub><doi>10.1109/ISAF.1998.786629</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1099-4734 |
| ispartof | ISAF 1998. Proceedings of the Eleventh IEEE International Symposium on Applications of Ferroelectrics (Cat. No.98CH36245), 1998, p.31-34 |
| issn | 1099-4734 2375-0448 |
| language | eng |
| recordid | cdi_ieee_primary_786629 |
| source | IEEE Xplore All Conference Series |
| subjects | Binary search trees Capacitive sensors Dielectric films Dielectric substrates Dielectric thin films Polarization Semiconductor thin films Sputtering Temperature X-ray diffraction |
| title | The influence of strain on the dielectric behavior of (Ba/sub x/Sr/sub 1-x/)Ti/sub 1+y/O/sub 3+z/ thin films grown by LS-MOCVD on Pt/SiO/sub 2//Si |
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