Metal bit-line common contact integration technology in 0.17 /spl mu/m-DRAM and merged DRAM in logic devices

The metal bit-line common contact (MBCC) process has been successfully integrated in 0.17 /spl mu/m DRAM and in merged DRAM in logic devices. By introducing in-situ i-PVD Ti-TiN on W-plug MBCC, reliable electrical performance, P/sup +/ R/sub c/

Saved in:
Bibliographic Details
Main Authors: Siyoung Choi, Bong-Young Yoo, Jae-Hak Kim, Seung-Man Choi, Hyeon-Deok Lee, Ho-Kyu Kang, Yong-Jik Park, Jong-Woo Park, Moon-Yong Lee
Format: Conference Proceeding
Language:English
Subjects:
Capacitors
Collimators
Contacts
Logic devices
Plugs
Random access memory
Silicidation
Thermal degradation
Thermal stability
Tin
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The metal bit-line common contact (MBCC) process has been successfully integrated in 0.17 /spl mu/m DRAM and in merged DRAM in logic devices. By introducing in-situ i-PVD Ti-TiN on W-plug MBCC, reliable electrical performance, P/sup +/ R/sub c/
DOI:10.1109/IITC.1999.787101