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30 Gbps wireless data transmission with fully integrated 240 GHz silicon based transmitter

In this paper we present communication measurements with a fully integrated 240 GHz transmitter based on a single SiGe RF chip in 0.13μm Bi-CMOS technology. For an improved transmitter gain the on-chip antenna is built up using in-antenna power combining in conjunction with a dielectric 12mm silicon...

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Main Authors: Eisenbeis, J., Boes, F., Goettel, B., Malz, S., Pfeiffer, U., Zwick, T.
Format: Conference Proceeding
Language:English
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creator Eisenbeis, J.
Boes, F.
Goettel, B.
Malz, S.
Pfeiffer, U.
Zwick, T.
description In this paper we present communication measurements with a fully integrated 240 GHz transmitter based on a single SiGe RF chip in 0.13μm Bi-CMOS technology. For an improved transmitter gain the on-chip antenna is built up using in-antenna power combining in conjunction with a dielectric 12mm silicon lens. The measurement results show that data rates of up to 30 Gbps are possible for 8-PSK modulated signals. For more robust communication with bit error ratio below 10 -3 , data rates of 24 Gbps could be achieved using QPSK modulated signals, without any error correction.
doi_str_mv 10.1109/SIRF.2017.7874363
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source IEEE Xplore All Conference Series
subjects Antenna measurements
Monolithic integrated circuits
Phase shift keying
Receivers
Silicon germanium
System-on-chip
Transmitting antennas
Wireless communication
title 30 Gbps wireless data transmission with fully integrated 240 GHz silicon based transmitter
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