Local Defect Density in Polycrystalline High-k Dielectrics: CAFM-Based Evaluation Methodology and Impact on MOSFET Variability

A methodology to determine with nanometer resolution the defect density in polycrystalline HfO2 layers has been developed. This methodology is based on experimental data measured with conductive atomic force microscopy and the obtained results have been validated using Kelvin prove force microscopy...

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Bibliographic Details
Published in:IEEE electron device letters 2017-05, Vol.38 (5), p.637-640
Main Authors: Couso, C., Porti, M., Martin-Martinez, J., Garcia-Loureiro, A. J., Seoane, N., Nafria, M.
Format: Article
Language:English
Subjects:
CAFM
Current measurement
Dielectrics
Hafnium compounds
high-k
High-k dielectric materials
KPFM
Logic gates
MOSFET
Nanoscale devices
polycrystalline dielectric
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Summary:A methodology to determine with nanometer resolution the defect density in polycrystalline HfO2 layers has been developed. This methodology is based on experimental data measured with conductive atomic force microscopy and the obtained results have been validated using Kelvin prove force microscopy measurements. The local defect density ( ρox ) and thickness (t ox ) of the gate dielectric have been included into a device simulator to evaluate their impact on the I D V G curves of MOSFETs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2680545