Top-Gate Electric-Double-Layer IZO-Based Synaptic Transistors for Neuron Networks

In this letter, top-gate electric-double- layer (EDL) indium-zinc-oxide (IZO)-based synaptic transistors were demonstrated. A silicon oxide solid electrolyte film was used as the insulator, which was deposited by the plasma-enhanced chemical vapor deposition method at room temperature. A low operati...

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Bibliographic Details
Published in:IEEE electron device letters 2017-05, Vol.38 (5), p.588-591
Main Authors: Wang, Jiabin, Li, Yuxing, Yang, Yi, Ren, Tian-Ling
Format: Article
Language:English
Subjects:
Artificial synapse
electric-double-layer transistors
isolated synaptic transistor
Logic gates
Neurons
Object recognition
Plasmas
Protons
Thin film transistors
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Summary:In this letter, top-gate electric-double- layer (EDL) indium-zinc-oxide (IZO)-based synaptic transistors were demonstrated. A silicon oxide solid electrolyte film was used as the insulator, which was deposited by the plasma-enhanced chemical vapor deposition method at room temperature. A low operation voltage of 1 V was achieved due to the formation of the EDL layer at the SiO 2 /IZO interface. In the top-gate synaptic transistors, paired-pulse facilitation and high-frequency filter were mimicked, which are the short-term synaptic behaviors. Standard microfabrication processes were used to pattern, which could be used for large integration in the future.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2690278