A simple wafer-level measurement technique for predicting oxide reliability

A new wafer-level measurement technique, the differential gate antenna analysis, has been developed to detect weaknesses in sub-micrometer oxide. This simple technique involves the use of dual antenna structures with different gate oxide areas but the same antenna area ratio. The critical parameter...

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Bibliographic Details
Published in:IEEE electron device letters 1995-06, Vol.16 (6), p.242-244
Main Authors: Nariani, S.R., Gabriel, C.T.
Format: Article
Language:English
Subjects:
Antenna measurements
Applied sciences
Condition monitoring
Costs
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Gate leakage
Integrated circuits
Life estimation
Life testing
Measurement techniques
MOSFETs
Plasma measurements
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Wafer scale integration
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Summary:A new wafer-level measurement technique, the differential gate antenna analysis, has been developed to detect weaknesses in sub-micrometer oxide. This simple technique involves the use of dual antenna structures with different gate oxide areas but the same antenna area ratio. The critical parameter is the difference in their failure levels. It is shown that such a differential measurement of antenna failures correlates with product failure during accelerated life testing. The differential antenna structures are thus proven useful for real-time wafer-level monitoring of oxide reliability.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.790722