Low-frequency noise properties of dynamic-threshold (DT) MOSFET's

This paper shows that MOSFET operated in dynamic-threshold (DT) mode (V/sub body/=V/sub gate/) is more suitable for low-noise RF/analog applications than those operated in conventional mode (V/sub body/=V/sub source/). Detailed low-frequency noise properties of these two modes of device operation we...

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Bibliographic Details
Published in:IEEE electron device letters 1999-10, Vol.20 (10), p.532-534
Main Authors: Hsu, Tsun-Lai, Tang, Denny Duan-Lee, Gong, Jeng
Format: Article
Language:English
Subjects:
Circuit noise
Cutoff frequency
Devices
Gates
Low-frequency noise
MOS devices
MOSFET circuits
MOSFETs
Noise
Radio frequencies
Radio frequency
Transconductance
Voltage
Wireless communication
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Summary:This paper shows that MOSFET operated in dynamic-threshold (DT) mode (V/sub body/=V/sub gate/) is more suitable for low-noise RF/analog applications than those operated in conventional mode (V/sub body/=V/sub source/). Detailed low-frequency noise properties of these two modes of device operation were compared for 0.31-μm gate MOSFET's, in which NMOS's are surface-channel devices (S.C.) and PMOS's are buried-channel (B.C.) devices. Experimental data show that when the devices are biased at same transconductance, the low-frequency noise in DT mode is 30 times lower (at g/sub m/=2.2×10/sup -3/ S) than that in the conventional mode for the B.C. devices and ten times (at g/sub m/=2.0×10/sup -3/ S) lower for the S.C. devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.791933