High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates

We report Al 0.85 Ga 0.15 N/Al 0.65 Ga 0.35 N high-electron mobility transistors on low-defect AlN buffer layers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as low as 1800 Ω/□. Devices with the source-drain spacing...

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Bibliographic Details
Published in:IEEE electron device letters 2017-07, Vol.38 (7), p.914-917
Main Authors: Muhtadi, Sakib, Seong Mo Hwang, Coleman, Antwon, Asif, Fatima, Simin, Grigory, Chandrashekhar, Mvs, Khan, Asif
Format: Article
Language:English
Subjects:
AlN template
Aluminum nitride
Alₓ Ga₁₋ₓN
Conductivity
HEMTs
high electron mobility transistor
III-V semiconductor materials
Logic gates
MODFETs
saturation current
Substrates
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Summary:We report Al 0.85 Ga 0.15 N/Al 0.65 Ga 0.35 N high-electron mobility transistors on low-defect AlN buffer layers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as low as 1800 Ω/□. Devices with the source-drain spacing of 5.5 μm and a gate length of 1.8 μm exhibited peak drain-currents as high as 250 mA/mm at a gate bias of +4 V. We also show that the 3-μm thick low-defect AlN buffer layers over sapphire to provide sufficient thermal conduction which enables stable device operation up to at least 40 V at 250 mA/mm with no current droop.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2701651