High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates

We report Al 0.85 Ga 0.15 N/Al 0.65 Ga 0.35 N high-electron mobility transistors on low-defect AlN buffer layers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as low as 1800 Ω/□. Devices with the source-drain spacing...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2017-07, Vol.38 (7), p.914-917
Main Authors: Muhtadi, Sakib, Seong Mo Hwang, Coleman, Antwon, Asif, Fatima, Simin, Grigory, Chandrashekhar, Mvs, Khan, Asif
Format: Article
Language:English
Subjects:
AlN template
Aluminum nitride
Alₓ Ga₁₋ₓN
Conductivity
HEMTs
high electron mobility transistor
III-V semiconductor materials
Logic gates
MODFETs
saturation current
Substrates
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 917
container_issue 7
container_start_page 914
container_title IEEE electron device letters
container_volume 38
creator Muhtadi, Sakib
Seong Mo Hwang
Coleman, Antwon
Asif, Fatima
Simin, Grigory
Chandrashekhar, Mvs
Khan, Asif
description We report Al 0.85 Ga 0.15 N/Al 0.65 Ga 0.35 N high-electron mobility transistors on low-defect AlN buffer layers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as low as 1800 Ω/□. Devices with the source-drain spacing of 5.5 μm and a gate length of 1.8 μm exhibited peak drain-currents as high as 250 mA/mm at a gate bias of +4 V. We also show that the 3-μm thick low-defect AlN buffer layers over sapphire to provide sufficient thermal conduction which enables stable device operation up to at least 40 V at 250 mA/mm with no current droop.
doi_str_mv 10.1109/LED.2017.2701651
format article
fullrecord <record><control><sourceid>ieee</sourceid><recordid>TN_cdi_ieee_primary_7920323</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7920323</ieee_id><sourcerecordid>7920323</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-87684b205cabcb788e1e45ded54554b910aa88e8e35919a41694ae6b57d68ba33</originalsourceid><addsrcrecordid>eNotjLFOwzAURS0EEqWwI7H4B5L6xX62M1ahtEihDAQxVnbyIIY0jeIs_XsiwXSkq3MPY_cgUgCRr8rNY5oJMGlmBGiEC7YARJsI1PKSLYRRkEgQ-prdxPgtBChl1II1u_DV8k1H9TSeev5y8qEL05lXo-tjiNNpjPwjTC1fdyLVuHUilbjnRev6njpeujPNxvys2lD_zNZ-9eaGoQ0j8YqOQ-cmirfs6tN1ke7-uWTvT5uq2CXl6_a5WJdJAINTYo22ymcCa-drb6wlIIUNNagQlc9BODePliTmkDsFOleOtEfTaOudlEv28NcNRHQYxnB04_lg8kzITMpf3jlTHA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates</title><source>IEEE Xplore (Online service)</source><creator>Muhtadi, Sakib ; Seong Mo Hwang ; Coleman, Antwon ; Asif, Fatima ; Simin, Grigory ; Chandrashekhar, Mvs ; Khan, Asif</creator><creatorcontrib>Muhtadi, Sakib ; Seong Mo Hwang ; Coleman, Antwon ; Asif, Fatima ; Simin, Grigory ; Chandrashekhar, Mvs ; Khan, Asif</creatorcontrib><description>We report Al 0.85 Ga 0.15 N/Al 0.65 Ga 0.35 N high-electron mobility transistors on low-defect AlN buffer layers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as low as 1800 Ω/□. Devices with the source-drain spacing of 5.5 μm and a gate length of 1.8 μm exhibited peak drain-currents as high as 250 mA/mm at a gate bias of +4 V. We also show that the 3-μm thick low-defect AlN buffer layers over sapphire to provide sufficient thermal conduction which enables stable device operation up to at least 40 V at 250 mA/mm with no current droop.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2017.2701651</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>AlN template ; Aluminum nitride ; Alₓ Ga₁₋ₓN ; Conductivity ; HEMTs ; high electron mobility transistor ; III-V semiconductor materials ; Logic gates ; MODFETs ; saturation current ; Substrates</subject><ispartof>IEEE electron device letters, 2017-07, Vol.38 (7), p.914-917</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7920323$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Muhtadi, Sakib</creatorcontrib><creatorcontrib>Seong Mo Hwang</creatorcontrib><creatorcontrib>Coleman, Antwon</creatorcontrib><creatorcontrib>Asif, Fatima</creatorcontrib><creatorcontrib>Simin, Grigory</creatorcontrib><creatorcontrib>Chandrashekhar, Mvs</creatorcontrib><creatorcontrib>Khan, Asif</creatorcontrib><title>High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We report Al 0.85 Ga 0.15 N/Al 0.65 Ga 0.35 N high-electron mobility transistors on low-defect AlN buffer layers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as low as 1800 Ω/□. Devices with the source-drain spacing of 5.5 μm and a gate length of 1.8 μm exhibited peak drain-currents as high as 250 mA/mm at a gate bias of +4 V. We also show that the 3-μm thick low-defect AlN buffer layers over sapphire to provide sufficient thermal conduction which enables stable device operation up to at least 40 V at 250 mA/mm with no current droop.</description><subject>AlN template</subject><subject>Aluminum nitride</subject><subject>Alₓ Ga₁₋ₓN</subject><subject>Conductivity</subject><subject>HEMTs</subject><subject>high electron mobility transistor</subject><subject>III-V semiconductor materials</subject><subject>Logic gates</subject><subject>MODFETs</subject><subject>saturation current</subject><subject>Substrates</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNotjLFOwzAURS0EEqWwI7H4B5L6xX62M1ahtEihDAQxVnbyIIY0jeIs_XsiwXSkq3MPY_cgUgCRr8rNY5oJMGlmBGiEC7YARJsI1PKSLYRRkEgQ-prdxPgtBChl1II1u_DV8k1H9TSeev5y8qEL05lXo-tjiNNpjPwjTC1fdyLVuHUilbjnRev6njpeujPNxvys2lD_zNZ-9eaGoQ0j8YqOQ-cmirfs6tN1ke7-uWTvT5uq2CXl6_a5WJdJAINTYo22ymcCa-drb6wlIIUNNagQlc9BODePliTmkDsFOleOtEfTaOudlEv28NcNRHQYxnB04_lg8kzITMpf3jlTHA</recordid><startdate>201707</startdate><enddate>201707</enddate><creator>Muhtadi, Sakib</creator><creator>Seong Mo Hwang</creator><creator>Coleman, Antwon</creator><creator>Asif, Fatima</creator><creator>Simin, Grigory</creator><creator>Chandrashekhar, Mvs</creator><creator>Khan, Asif</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope></search><sort><creationdate>201707</creationdate><title>High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates</title><author>Muhtadi, Sakib ; Seong Mo Hwang ; Coleman, Antwon ; Asif, Fatima ; Simin, Grigory ; Chandrashekhar, Mvs ; Khan, Asif</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-87684b205cabcb788e1e45ded54554b910aa88e8e35919a41694ae6b57d68ba33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>AlN template</topic><topic>Aluminum nitride</topic><topic>Alₓ Ga₁₋ₓN</topic><topic>Conductivity</topic><topic>HEMTs</topic><topic>high electron mobility transistor</topic><topic>III-V semiconductor materials</topic><topic>Logic gates</topic><topic>MODFETs</topic><topic>saturation current</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Muhtadi, Sakib</creatorcontrib><creatorcontrib>Seong Mo Hwang</creatorcontrib><creatorcontrib>Coleman, Antwon</creatorcontrib><creatorcontrib>Asif, Fatima</creatorcontrib><creatorcontrib>Simin, Grigory</creatorcontrib><creatorcontrib>Chandrashekhar, Mvs</creatorcontrib><creatorcontrib>Khan, Asif</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) Online</collection><collection>IEEE Xplore (Online service)</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Muhtadi, Sakib</au><au>Seong Mo Hwang</au><au>Coleman, Antwon</au><au>Asif, Fatima</au><au>Simin, Grigory</au><au>Chandrashekhar, Mvs</au><au>Khan, Asif</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2017-07</date><risdate>2017</risdate><volume>38</volume><issue>7</issue><spage>914</spage><epage>917</epage><pages>914-917</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We report Al 0.85 Ga 0.15 N/Al 0.65 Ga 0.35 N high-electron mobility transistors on low-defect AlN buffer layers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as low as 1800 Ω/□. Devices with the source-drain spacing of 5.5 μm and a gate length of 1.8 μm exhibited peak drain-currents as high as 250 mA/mm at a gate bias of +4 V. We also show that the 3-μm thick low-defect AlN buffer layers over sapphire to provide sufficient thermal conduction which enables stable device operation up to at least 40 V at 250 mA/mm with no current droop.</abstract><pub>IEEE</pub><doi>10.1109/LED.2017.2701651</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0741-3106
ispartof IEEE electron device letters, 2017-07, Vol.38 (7), p.914-917
issn 0741-3106
1558-0563
language eng
recordid cdi_ieee_primary_7920323
source IEEE Xplore (Online service)
subjects AlN template
Aluminum nitride
Alₓ Ga₁₋ₓN
Conductivity
HEMTs
high electron mobility transistor
III-V semiconductor materials
Logic gates
MODFETs
saturation current
Substrates
title High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T07%3A52%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20Electron%20Mobility%20Transistors%20With%20Al0.65Ga0.35N%20Channel%20Layers%20on%20Thick%20AlN/Sapphire%20Templates&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Muhtadi,%20Sakib&rft.date=2017-07&rft.volume=38&rft.issue=7&rft.spage=914&rft.epage=917&rft.pages=914-917&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2017.2701651&rft_dat=%3Cieee%3E7920323%3C/ieee%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i175t-87684b205cabcb788e1e45ded54554b910aa88e8e35919a41694ae6b57d68ba33%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=7920323&rfr_iscdi=true