Loading…

A 1-V CMOS D/A converter with multi-input floating-gate MOSFET

A low-voltage D/A converter using multi-input floating-gate MOSFET within a matrix current cell architecture is described in this paper. The two-input floating-gate p-channel MOSFET of each current cell performs the combined functions of current source and current switch. The double-gate-driven MOSF...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of solid-state circuits 1999-10, Vol.34 (10), p.1386-1390
Main Authors: Wong, L.S.Y., Kwok, C.Y., Rigby, G.A.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c307t-a0704e2caa47ed3a1064e6cd4bb5f927e5c23fca5d94a963f1431fe8ce23bcca3
cites cdi_FETCH-LOGICAL-c307t-a0704e2caa47ed3a1064e6cd4bb5f927e5c23fca5d94a963f1431fe8ce23bcca3
container_end_page 1390
container_issue 10
container_start_page 1386
container_title IEEE journal of solid-state circuits
container_volume 34
creator Wong, L.S.Y.
Kwok, C.Y.
Rigby, G.A.
description A low-voltage D/A converter using multi-input floating-gate MOSFET within a matrix current cell architecture is described in this paper. The two-input floating-gate p-channel MOSFET of each current cell performs the combined functions of current source and current switch. The double-gate-driven MOSFET circuit technique was employed in the digital circuitry to facilitate low supply voltage operation. A 6-bit and 8-bit digital-to-analog converter (DAC) have been fabricated in standard double-poly double-metal 1.2 /spl mu/m CMOS technology. Measurements show a supply voltage as low as 0.9 and 1.0 V is sufficient to operate the 6-bit and 8-bit DAC, respectively, with a 5 Msamples/s conversion rate.
doi_str_mv 10.1109/4.792610
format article
fullrecord <record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_ieee_primary_792610</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>792610</ieee_id><sourcerecordid>28141994</sourcerecordid><originalsourceid>FETCH-LOGICAL-c307t-a0704e2caa47ed3a1064e6cd4bb5f927e5c23fca5d94a963f1431fe8ce23bcca3</originalsourceid><addsrcrecordid>eNp90DtPwzAQB3ALgUQpSMxMnoDFrc92Hl6QqpaXVNSBh9gs172UoDQpsQPi22OUipHpdHe_u-FPyCnwEQDXYzXKtEiB75EBJEnOIJOv-2TAOeRMC84PyZH377FVKocBuZpQYC90-rB4pLPxhLqm_sQ2YEu_yvBGN10VSlbW2y7QompsKOs1W9uANB7cXD8dk4PCVh5PdnVInuN0esfmi9v76WTOnORZYJZnXKFw1qoMV9ICTxWmbqWWy6TQIsPECVk4m6y0sjqVBSgJBeYOhVw6Z-WQXPR_t23z0aEPZlN6h1Vla2w6bzRoLaQUIsrzf6XIQUWsIrzsoWsb71sszLYtN7b9NsDNb5RGmT7KSM96WiLiH9stfwBmv2vo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28141994</pqid></control><display><type>article</type><title>A 1-V CMOS D/A converter with multi-input floating-gate MOSFET</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Wong, L.S.Y. ; Kwok, C.Y. ; Rigby, G.A.</creator><creatorcontrib>Wong, L.S.Y. ; Kwok, C.Y. ; Rigby, G.A.</creatorcontrib><description>A low-voltage D/A converter using multi-input floating-gate MOSFET within a matrix current cell architecture is described in this paper. The two-input floating-gate p-channel MOSFET of each current cell performs the combined functions of current source and current switch. The double-gate-driven MOSFET circuit technique was employed in the digital circuitry to facilitate low supply voltage operation. A 6-bit and 8-bit digital-to-analog converter (DAC) have been fabricated in standard double-poly double-metal 1.2 /spl mu/m CMOS technology. Measurements show a supply voltage as low as 0.9 and 1.0 V is sufficient to operate the 6-bit and 8-bit DAC, respectively, with a 5 Msamples/s conversion rate.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/4.792610</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>IEEE</publisher><subject>Australia ; Circuits ; CMOS ; CMOS integrated circuits ; CMOS process ; CMOS technology ; Conversion ; Converters ; Electric potential ; Logic circuits ; Low voltage ; Matrix converters ; MOSFET circuits ; MOSFETs ; Switches ; Switching circuits ; Voltage</subject><ispartof>IEEE journal of solid-state circuits, 1999-10, Vol.34 (10), p.1386-1390</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c307t-a0704e2caa47ed3a1064e6cd4bb5f927e5c23fca5d94a963f1431fe8ce23bcca3</citedby><cites>FETCH-LOGICAL-c307t-a0704e2caa47ed3a1064e6cd4bb5f927e5c23fca5d94a963f1431fe8ce23bcca3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/792610$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Wong, L.S.Y.</creatorcontrib><creatorcontrib>Kwok, C.Y.</creatorcontrib><creatorcontrib>Rigby, G.A.</creatorcontrib><title>A 1-V CMOS D/A converter with multi-input floating-gate MOSFET</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>A low-voltage D/A converter using multi-input floating-gate MOSFET within a matrix current cell architecture is described in this paper. The two-input floating-gate p-channel MOSFET of each current cell performs the combined functions of current source and current switch. The double-gate-driven MOSFET circuit technique was employed in the digital circuitry to facilitate low supply voltage operation. A 6-bit and 8-bit digital-to-analog converter (DAC) have been fabricated in standard double-poly double-metal 1.2 /spl mu/m CMOS technology. Measurements show a supply voltage as low as 0.9 and 1.0 V is sufficient to operate the 6-bit and 8-bit DAC, respectively, with a 5 Msamples/s conversion rate.</description><subject>Australia</subject><subject>Circuits</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Conversion</subject><subject>Converters</subject><subject>Electric potential</subject><subject>Logic circuits</subject><subject>Low voltage</subject><subject>Matrix converters</subject><subject>MOSFET circuits</subject><subject>MOSFETs</subject><subject>Switches</subject><subject>Switching circuits</subject><subject>Voltage</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNp90DtPwzAQB3ALgUQpSMxMnoDFrc92Hl6QqpaXVNSBh9gs172UoDQpsQPi22OUipHpdHe_u-FPyCnwEQDXYzXKtEiB75EBJEnOIJOv-2TAOeRMC84PyZH377FVKocBuZpQYC90-rB4pLPxhLqm_sQ2YEu_yvBGN10VSlbW2y7QompsKOs1W9uANB7cXD8dk4PCVh5PdnVInuN0esfmi9v76WTOnORZYJZnXKFw1qoMV9ICTxWmbqWWy6TQIsPECVk4m6y0sjqVBSgJBeYOhVw6Z-WQXPR_t23z0aEPZlN6h1Vla2w6bzRoLaQUIsrzf6XIQUWsIrzsoWsb71sszLYtN7b9NsDNb5RGmT7KSM96WiLiH9stfwBmv2vo</recordid><startdate>19991001</startdate><enddate>19991001</enddate><creator>Wong, L.S.Y.</creator><creator>Kwok, C.Y.</creator><creator>Rigby, G.A.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>19991001</creationdate><title>A 1-V CMOS D/A converter with multi-input floating-gate MOSFET</title><author>Wong, L.S.Y. ; Kwok, C.Y. ; Rigby, G.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c307t-a0704e2caa47ed3a1064e6cd4bb5f927e5c23fca5d94a963f1431fe8ce23bcca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Australia</topic><topic>Circuits</topic><topic>CMOS</topic><topic>CMOS integrated circuits</topic><topic>CMOS process</topic><topic>CMOS technology</topic><topic>Conversion</topic><topic>Converters</topic><topic>Electric potential</topic><topic>Logic circuits</topic><topic>Low voltage</topic><topic>Matrix converters</topic><topic>MOSFET circuits</topic><topic>MOSFETs</topic><topic>Switches</topic><topic>Switching circuits</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wong, L.S.Y.</creatorcontrib><creatorcontrib>Kwok, C.Y.</creatorcontrib><creatorcontrib>Rigby, G.A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wong, L.S.Y.</au><au>Kwok, C.Y.</au><au>Rigby, G.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 1-V CMOS D/A converter with multi-input floating-gate MOSFET</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1999-10-01</date><risdate>1999</risdate><volume>34</volume><issue>10</issue><spage>1386</spage><epage>1390</epage><pages>1386-1390</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A low-voltage D/A converter using multi-input floating-gate MOSFET within a matrix current cell architecture is described in this paper. The two-input floating-gate p-channel MOSFET of each current cell performs the combined functions of current source and current switch. The double-gate-driven MOSFET circuit technique was employed in the digital circuitry to facilitate low supply voltage operation. A 6-bit and 8-bit digital-to-analog converter (DAC) have been fabricated in standard double-poly double-metal 1.2 /spl mu/m CMOS technology. Measurements show a supply voltage as low as 0.9 and 1.0 V is sufficient to operate the 6-bit and 8-bit DAC, respectively, with a 5 Msamples/s conversion rate.</abstract><pub>IEEE</pub><doi>10.1109/4.792610</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0018-9200
ispartof IEEE journal of solid-state circuits, 1999-10, Vol.34 (10), p.1386-1390
issn 0018-9200
1558-173X
language eng
recordid cdi_ieee_primary_792610
source IEEE Electronic Library (IEL) Journals
subjects Australia
Circuits
CMOS
CMOS integrated circuits
CMOS process
CMOS technology
Conversion
Converters
Electric potential
Logic circuits
Low voltage
Matrix converters
MOSFET circuits
MOSFETs
Switches
Switching circuits
Voltage
title A 1-V CMOS D/A converter with multi-input floating-gate MOSFET
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T21%3A13%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%201-V%20CMOS%20D/A%20converter%20with%20multi-input%20floating-gate%20MOSFET&rft.jtitle=IEEE%20journal%20of%20solid-state%20circuits&rft.au=Wong,%20L.S.Y.&rft.date=1999-10-01&rft.volume=34&rft.issue=10&rft.spage=1386&rft.epage=1390&rft.pages=1386-1390&rft.issn=0018-9200&rft.eissn=1558-173X&rft.coden=IJSCBC&rft_id=info:doi/10.1109/4.792610&rft_dat=%3Cproquest_ieee_%3E28141994%3C/proquest_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c307t-a0704e2caa47ed3a1064e6cd4bb5f927e5c23fca5d94a963f1431fe8ce23bcca3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28141994&rft_id=info:pmid/&rft_ieee_id=792610&rfr_iscdi=true