Loading…
A 1-V CMOS D/A converter with multi-input floating-gate MOSFET
A low-voltage D/A converter using multi-input floating-gate MOSFET within a matrix current cell architecture is described in this paper. The two-input floating-gate p-channel MOSFET of each current cell performs the combined functions of current source and current switch. The double-gate-driven MOSF...
Saved in:
Published in: | IEEE journal of solid-state circuits 1999-10, Vol.34 (10), p.1386-1390 |
---|---|
Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c307t-a0704e2caa47ed3a1064e6cd4bb5f927e5c23fca5d94a963f1431fe8ce23bcca3 |
---|---|
cites | cdi_FETCH-LOGICAL-c307t-a0704e2caa47ed3a1064e6cd4bb5f927e5c23fca5d94a963f1431fe8ce23bcca3 |
container_end_page | 1390 |
container_issue | 10 |
container_start_page | 1386 |
container_title | IEEE journal of solid-state circuits |
container_volume | 34 |
creator | Wong, L.S.Y. Kwok, C.Y. Rigby, G.A. |
description | A low-voltage D/A converter using multi-input floating-gate MOSFET within a matrix current cell architecture is described in this paper. The two-input floating-gate p-channel MOSFET of each current cell performs the combined functions of current source and current switch. The double-gate-driven MOSFET circuit technique was employed in the digital circuitry to facilitate low supply voltage operation. A 6-bit and 8-bit digital-to-analog converter (DAC) have been fabricated in standard double-poly double-metal 1.2 /spl mu/m CMOS technology. Measurements show a supply voltage as low as 0.9 and 1.0 V is sufficient to operate the 6-bit and 8-bit DAC, respectively, with a 5 Msamples/s conversion rate. |
doi_str_mv | 10.1109/4.792610 |
format | article |
fullrecord | <record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_ieee_primary_792610</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>792610</ieee_id><sourcerecordid>28141994</sourcerecordid><originalsourceid>FETCH-LOGICAL-c307t-a0704e2caa47ed3a1064e6cd4bb5f927e5c23fca5d94a963f1431fe8ce23bcca3</originalsourceid><addsrcrecordid>eNp90DtPwzAQB3ALgUQpSMxMnoDFrc92Hl6QqpaXVNSBh9gs172UoDQpsQPi22OUipHpdHe_u-FPyCnwEQDXYzXKtEiB75EBJEnOIJOv-2TAOeRMC84PyZH377FVKocBuZpQYC90-rB4pLPxhLqm_sQ2YEu_yvBGN10VSlbW2y7QompsKOs1W9uANB7cXD8dk4PCVh5PdnVInuN0esfmi9v76WTOnORZYJZnXKFw1qoMV9ICTxWmbqWWy6TQIsPECVk4m6y0sjqVBSgJBeYOhVw6Z-WQXPR_t23z0aEPZlN6h1Vla2w6bzRoLaQUIsrzf6XIQUWsIrzsoWsb71sszLYtN7b9NsDNb5RGmT7KSM96WiLiH9stfwBmv2vo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28141994</pqid></control><display><type>article</type><title>A 1-V CMOS D/A converter with multi-input floating-gate MOSFET</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Wong, L.S.Y. ; Kwok, C.Y. ; Rigby, G.A.</creator><creatorcontrib>Wong, L.S.Y. ; Kwok, C.Y. ; Rigby, G.A.</creatorcontrib><description>A low-voltage D/A converter using multi-input floating-gate MOSFET within a matrix current cell architecture is described in this paper. The two-input floating-gate p-channel MOSFET of each current cell performs the combined functions of current source and current switch. The double-gate-driven MOSFET circuit technique was employed in the digital circuitry to facilitate low supply voltage operation. A 6-bit and 8-bit digital-to-analog converter (DAC) have been fabricated in standard double-poly double-metal 1.2 /spl mu/m CMOS technology. Measurements show a supply voltage as low as 0.9 and 1.0 V is sufficient to operate the 6-bit and 8-bit DAC, respectively, with a 5 Msamples/s conversion rate.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/4.792610</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>IEEE</publisher><subject>Australia ; Circuits ; CMOS ; CMOS integrated circuits ; CMOS process ; CMOS technology ; Conversion ; Converters ; Electric potential ; Logic circuits ; Low voltage ; Matrix converters ; MOSFET circuits ; MOSFETs ; Switches ; Switching circuits ; Voltage</subject><ispartof>IEEE journal of solid-state circuits, 1999-10, Vol.34 (10), p.1386-1390</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c307t-a0704e2caa47ed3a1064e6cd4bb5f927e5c23fca5d94a963f1431fe8ce23bcca3</citedby><cites>FETCH-LOGICAL-c307t-a0704e2caa47ed3a1064e6cd4bb5f927e5c23fca5d94a963f1431fe8ce23bcca3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/792610$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Wong, L.S.Y.</creatorcontrib><creatorcontrib>Kwok, C.Y.</creatorcontrib><creatorcontrib>Rigby, G.A.</creatorcontrib><title>A 1-V CMOS D/A converter with multi-input floating-gate MOSFET</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>A low-voltage D/A converter using multi-input floating-gate MOSFET within a matrix current cell architecture is described in this paper. The two-input floating-gate p-channel MOSFET of each current cell performs the combined functions of current source and current switch. The double-gate-driven MOSFET circuit technique was employed in the digital circuitry to facilitate low supply voltage operation. A 6-bit and 8-bit digital-to-analog converter (DAC) have been fabricated in standard double-poly double-metal 1.2 /spl mu/m CMOS technology. Measurements show a supply voltage as low as 0.9 and 1.0 V is sufficient to operate the 6-bit and 8-bit DAC, respectively, with a 5 Msamples/s conversion rate.</description><subject>Australia</subject><subject>Circuits</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Conversion</subject><subject>Converters</subject><subject>Electric potential</subject><subject>Logic circuits</subject><subject>Low voltage</subject><subject>Matrix converters</subject><subject>MOSFET circuits</subject><subject>MOSFETs</subject><subject>Switches</subject><subject>Switching circuits</subject><subject>Voltage</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNp90DtPwzAQB3ALgUQpSMxMnoDFrc92Hl6QqpaXVNSBh9gs172UoDQpsQPi22OUipHpdHe_u-FPyCnwEQDXYzXKtEiB75EBJEnOIJOv-2TAOeRMC84PyZH377FVKocBuZpQYC90-rB4pLPxhLqm_sQ2YEu_yvBGN10VSlbW2y7QompsKOs1W9uANB7cXD8dk4PCVh5PdnVInuN0esfmi9v76WTOnORZYJZnXKFw1qoMV9ICTxWmbqWWy6TQIsPECVk4m6y0sjqVBSgJBeYOhVw6Z-WQXPR_t23z0aEPZlN6h1Vla2w6bzRoLaQUIsrzf6XIQUWsIrzsoWsb71sszLYtN7b9NsDNb5RGmT7KSM96WiLiH9stfwBmv2vo</recordid><startdate>19991001</startdate><enddate>19991001</enddate><creator>Wong, L.S.Y.</creator><creator>Kwok, C.Y.</creator><creator>Rigby, G.A.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>19991001</creationdate><title>A 1-V CMOS D/A converter with multi-input floating-gate MOSFET</title><author>Wong, L.S.Y. ; Kwok, C.Y. ; Rigby, G.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c307t-a0704e2caa47ed3a1064e6cd4bb5f927e5c23fca5d94a963f1431fe8ce23bcca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Australia</topic><topic>Circuits</topic><topic>CMOS</topic><topic>CMOS integrated circuits</topic><topic>CMOS process</topic><topic>CMOS technology</topic><topic>Conversion</topic><topic>Converters</topic><topic>Electric potential</topic><topic>Logic circuits</topic><topic>Low voltage</topic><topic>Matrix converters</topic><topic>MOSFET circuits</topic><topic>MOSFETs</topic><topic>Switches</topic><topic>Switching circuits</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wong, L.S.Y.</creatorcontrib><creatorcontrib>Kwok, C.Y.</creatorcontrib><creatorcontrib>Rigby, G.A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wong, L.S.Y.</au><au>Kwok, C.Y.</au><au>Rigby, G.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 1-V CMOS D/A converter with multi-input floating-gate MOSFET</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1999-10-01</date><risdate>1999</risdate><volume>34</volume><issue>10</issue><spage>1386</spage><epage>1390</epage><pages>1386-1390</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A low-voltage D/A converter using multi-input floating-gate MOSFET within a matrix current cell architecture is described in this paper. The two-input floating-gate p-channel MOSFET of each current cell performs the combined functions of current source and current switch. The double-gate-driven MOSFET circuit technique was employed in the digital circuitry to facilitate low supply voltage operation. A 6-bit and 8-bit digital-to-analog converter (DAC) have been fabricated in standard double-poly double-metal 1.2 /spl mu/m CMOS technology. Measurements show a supply voltage as low as 0.9 and 1.0 V is sufficient to operate the 6-bit and 8-bit DAC, respectively, with a 5 Msamples/s conversion rate.</abstract><pub>IEEE</pub><doi>10.1109/4.792610</doi><tpages>5</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0018-9200 |
ispartof | IEEE journal of solid-state circuits, 1999-10, Vol.34 (10), p.1386-1390 |
issn | 0018-9200 1558-173X |
language | eng |
recordid | cdi_ieee_primary_792610 |
source | IEEE Electronic Library (IEL) Journals |
subjects | Australia Circuits CMOS CMOS integrated circuits CMOS process CMOS technology Conversion Converters Electric potential Logic circuits Low voltage Matrix converters MOSFET circuits MOSFETs Switches Switching circuits Voltage |
title | A 1-V CMOS D/A converter with multi-input floating-gate MOSFET |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T21%3A13%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%201-V%20CMOS%20D/A%20converter%20with%20multi-input%20floating-gate%20MOSFET&rft.jtitle=IEEE%20journal%20of%20solid-state%20circuits&rft.au=Wong,%20L.S.Y.&rft.date=1999-10-01&rft.volume=34&rft.issue=10&rft.spage=1386&rft.epage=1390&rft.pages=1386-1390&rft.issn=0018-9200&rft.eissn=1558-173X&rft.coden=IJSCBC&rft_id=info:doi/10.1109/4.792610&rft_dat=%3Cproquest_ieee_%3E28141994%3C/proquest_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c307t-a0704e2caa47ed3a1064e6cd4bb5f927e5c23fca5d94a963f1431fe8ce23bcca3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28141994&rft_id=info:pmid/&rft_ieee_id=792610&rfr_iscdi=true |