Design of a low parasitic inductance SiC power module with double-sided cooling

In this paper, a low parasitic inductance SiC power module with double-sided cooling is designed and compared with a baseline double-sided cooled module. With the unique 3D layout utilizing vertical interconnection, the power loop inductance is effectively reduced without sacrificing the thermal per...

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Bibliographic Details
Main Authors: Fei Yang, Zhenxian Liang, Wang, Zhiqiang Jack, Wang, Fred
Format: Conference Proceeding
Language:English
Subjects:
Capacitors
Cooling
double-sided cooling
Inductance
Layout
low parasitic inductance
Multichip modules
SiC power module
Silicon carbide
Substrates
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Summary:In this paper, a low parasitic inductance SiC power module with double-sided cooling is designed and compared with a baseline double-sided cooled module. With the unique 3D layout utilizing vertical interconnection, the power loop inductance is effectively reduced without sacrificing the thermal performance. Both simulations and experiments are carried out to validate the design. Q3D simulation results show a power loop inductance of 1.63 nH, verified by the experiment, indicating more than 60% reduction of power loop inductance compared with the baseline module. With 0Ω external gate resistance turn-off at 600V, the voltage overshoot is less than 9% of the bus voltage at a load of 44.6A.
ISSN:2470-6647
DOI:10.1109/APEC.2017.7931132