MTPM ramped programming optimization methodology

Ramped programming optimization is investigated in order to limit the risk of gate oxide breakdown (BD) during the programming of a Multi-Time Programmable Memory. Optimization of the programming ramp rate has been proven to be beneficial at both device level and array level. This allows for inline...

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Bibliographic Details
Main Authors: Randriamihaja, Y. Mamy, McMahon, W., Kerber, A., Chbili, Z., Parameshwaran, B., Kirihata, T., Cestero, A., Robson, N., Moy, D., Katz, R., Anand, D., Pape, J., Iyer, S. S.
Format: Conference Proceeding
Language:English
Subjects:
BTI
Electric breakdown
Ions
Logic gates
Monitoring
MTPM
Nonvolatile memory
Optimization
Programming
ramped programming
Random access memory
TDDB
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Summary:Ramped programming optimization is investigated in order to limit the risk of gate oxide breakdown (BD) during the programming of a Multi-Time Programmable Memory. Optimization of the programming ramp rate has been proven to be beneficial at both device level and array level. This allows for inline monitoring of programmability and BD-risk reduction as a function of process changes.
ISSN:1938-1891
DOI:10.1109/IRPS.2017.7936386