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MTPM ramped programming optimization methodology
Ramped programming optimization is investigated in order to limit the risk of gate oxide breakdown (BD) during the programming of a Multi-Time Programmable Memory. Optimization of the programming ramp rate has been proven to be beneficial at both device level and array level. This allows for inline...
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creator | Randriamihaja, Y. Mamy McMahon, W. Kerber, A. Chbili, Z. Parameshwaran, B. Kirihata, T. Cestero, A. Robson, N. Moy, D. Katz, R. Anand, D. Pape, J. Iyer, S. S. |
description | Ramped programming optimization is investigated in order to limit the risk of gate oxide breakdown (BD) during the programming of a Multi-Time Programmable Memory. Optimization of the programming ramp rate has been proven to be beneficial at both device level and array level. This allows for inline monitoring of programmability and BD-risk reduction as a function of process changes. |
doi_str_mv | 10.1109/IRPS.2017.7936386 |
format | conference_proceeding |
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S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>MTPM ramped programming optimization methodology</atitle><btitle>2017 IEEE International Reliability Physics Symposium (IRPS)</btitle><stitle>IRPS</stitle><date>2017-04</date><risdate>2017</risdate><spage>PM-4.1</spage><epage>PM-4.4</epage><pages>PM-4.1-PM-4.4</pages><eissn>1938-1891</eissn><eisbn>9781509066414</eisbn><eisbn>1509066411</eisbn><abstract>Ramped programming optimization is investigated in order to limit the risk of gate oxide breakdown (BD) during the programming of a Multi-Time Programmable Memory. Optimization of the programming ramp rate has been proven to be beneficial at both device level and array level. This allows for inline monitoring of programmability and BD-risk reduction as a function of process changes.</abstract><pub>IEEE</pub><doi>10.1109/IRPS.2017.7936386</doi></addata></record> |
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identifier | EISSN: 1938-1891 |
ispartof | 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.PM-4.1-PM-4.4 |
issn | 1938-1891 |
language | eng |
recordid | cdi_ieee_primary_7936386 |
source | IEEE Xplore All Conference Series |
subjects | BTI Electric breakdown Ions Logic gates Monitoring MTPM Nonvolatile memory Optimization Programming ramped programming Random access memory TDDB |
title | MTPM ramped programming optimization methodology |
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